| No. |
Part Name |
Description |
Manufacturer |
| 13801 |
IRF640FP |
N-CHANNEL 200V - 0.150 OHM - 18A TO-220/TO-220FP MESH OVERLAY MOSFET |
ST Microelectronics |
| 13802 |
IRF640L |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13803 |
IRF640LPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13804 |
IRF640N |
N-Channel Power MOSFETs 200V, 18A, 0.15-Ohm |
Fairchild Semiconductor |
| 13805 |
IRF640N |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13806 |
IRF640NL |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13807 |
IRF640NLPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 13808 |
IRF640NPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13809 |
IRF640NS |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13810 |
IRF640NSPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13811 |
IRF640NSTR |
N-channel power MOSFET for fast switching applications, 200V, 18A |
International Rectifier |
| 13812 |
IRF640NSTRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13813 |
IRF640NSTRLPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13814 |
IRF640NSTRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13815 |
IRF640NSTRRPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13816 |
IRF640PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13817 |
IRF640S |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13818 |
IRF640S |
N-channel TrenchMOS transistor |
Philips |
| 13819 |
IRF640S |
N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET |
ST Microelectronics |
| 13820 |
IRF640SPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13821 |
IRF640STR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13822 |
IRF640STRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13823 |
IRF640STRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13824 |
IRF641 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 13825 |
IRF641 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
| 13826 |
IRF641 |
N-Channel Power MOSFET |
Samsung Electronic |
| 13827 |
IRF641 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A |
Siliconix |
| 13828 |
IRF642 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 13829 |
IRF642 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. |
General Electric Solid State |
| 13830 |
IRF642 |
N-Channel Power MOSFET |
Samsung Electronic |
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