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Datasheets for 120

Datasheets found :: 28821
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No. Part Name Description Manufacturer
1381 2MBI50L-120 IGBT(1200V 50A) Fuji Electric
1382 2MBI50N-120 IGBT(1200V 50A) Fuji Electric
1383 2MBI50N-120 IGBT(1200V 50A) Fuji Electric
1384 2MBI75F-120 IGBT(1200V 75A) Fuji Electric
1385 2MBI75F-120 IGBT(1200V 75A) Fuji Electric
1386 2MBI75L-120 IGBT(1200V 75A) Fuji Electric
1387 2MBI75L-120 IGBT(1200V 75A) Fuji Electric
1388 2MBI75N-120 IGBT(1200V 75A) Fuji Electric
1389 2MBI75N-120 IGBT(1200V 75A) Fuji Electric
1390 2MBI75S IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A Fuji Electric
1391 2N1073B PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 120V Motorola
1392 2N1120 PNP Germanium power transistor for military and industrial power applications Motorola
1393 2N1120 Germanium PNP Transistor Motorola
1394 2N120 Silicon NPN Transistor Motorola
1395 2N1200 Silicon NPN Transistor Motorola
1396 2N1201 Silicon NPN Transistor Motorola
1397 2N1202 Germanium PNP Transistor Motorola
1398 2N1203 Germanium PNP Transistor Motorola
1399 2N1204 PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications Motorola
1400 2N1204 Germanium PNP Transistor Motorola
1401 2N1204A PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications Motorola
1402 2N1204A Germanium PNP Transistor Motorola
1403 2N1206 Silicon NPN Transistor Motorola
1404 2N1207 Silicon NPN Transistor Motorola
1405 2N1208 Silicon NPN Transistor Motorola
1406 2N1208 Trans GP BJT NPN 45V 5A 3-Pin TO-61 New Jersey Semiconductor
1407 2N1208 NPN Triple Diffused - Military applications SESCOSEM
1408 2N1209 Silicon NPN Transistor Motorola
1409 2N1209 Trans GP BJT NPN 45V 5A 3-Pin TO-61 New Jersey Semiconductor
1410 2N1209 NPN Triple Diffused - Military applications SESCOSEM


Datasheets found :: 28821
Page: | 43 | 44 | 45 | 46 | 47 | 48 | 49 | 50 | 51 |



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