| No. |
Part Name |
Description |
Manufacturer |
| 1501 |
2N6537 |
Trans GP BJT NPN 120V 8A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 1502 |
2N6576 |
15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 1503 |
2N6576 |
15A NPN silicon darlington 120W power transistor |
Motorola |
| 1504 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 1505 |
2N6577 |
15A NPN silicon darlington 120W power transistor |
Motorola |
| 1506 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 1507 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 1508 |
2N6578 |
15A NPN silicon darlington 120W power transistor |
Motorola |
| 1509 |
2N6578 |
Trans Darlington Power Transistor 120V 15A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
| 1510 |
2N697 |
0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 1511 |
2N699 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 1512 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 1513 |
2R5SVPB120M |
Conductive Polymer Aluminum Solid Capacitors (OS-CON) SVPB |
Panasonic |
| 1514 |
2RI100G-120 |
POWER DIODE MODULE |
Fuji Electric |
| 1515 |
2RI100G-120_160 |
POWER DIODE MODULE |
Fuji Electric |
| 1516 |
2RI60G-120 |
POWER DIODE MODULE |
Fuji Electric |
| 1517 |
2RI60G-120_160 |
POWER DIODE MODULE |
Fuji Electric |
| 1518 |
2SA1072 |
Trans GP BJT PNP 120V 12A 3-Pin(3+Tab) RM-60 |
New Jersey Semiconductor |
| 1519 |
2SA1073 |
Trans GP BJT PNP 120V 12A 3-Pin(3+Tab) RM-60 |
New Jersey Semiconductor |
| 1520 |
2SA1077 |
Trans GP BJT PNP 120V 12A 3-Pin(3+Tab) RM-60 |
New Jersey Semiconductor |
| 1521 |
2SA1078 |
Trans GP BJT PNP 120V 12A 3-Pin(3+Tab) RM-60 |
New Jersey Semiconductor |
| 1522 |
2SA1079 |
Trans GP BJT PNP 120V 12A 3-Pin(3+Tab) RM-60 |
New Jersey Semiconductor |
| 1523 |
2SA1120 |
Trans GP BJT PNP 55V 0.1A 3-Pin TO-92-B1 |
New Jersey Semiconductor |
| 1524 |
2SA1120 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
| 1525 |
2SA1120 |
Silicon PNP epitaxial transistor, strobo flash and audio power amplifier applications |
TOSHIBA |
| 1526 |
2SA1200 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Switching Applications |
TOSHIBA |
| 1527 |
2SA1201 |
Transistor Silicon PNP Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications |
TOSHIBA |
| 1528 |
2SA1201-O |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 1529 |
2SA1201-Y |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 1530 |
2SA1202 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
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