No. |
Part Name |
Description |
Manufacturer |
1531 |
2SA1203 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
1532 |
2SA1204 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
1533 |
2SA1205 |
Trans GP BJT PNP 160V 0.07A 3-Pin NP |
New Jersey Semiconductor |
1534 |
2SA1205 |
SILICON PNP EPITAXIAL PLANAR |
Sanken |
1535 |
2SA1205 |
Silicon PNP Power Transistors TO-3PN package |
Savantic |
1536 |
2SA1206 |
PNP SILICON TEANSISTOR |
NEC |
1537 |
2SA1207 |
High-Voltage Switching AF 60W Predriver Applications |
SANYO |
1538 |
2SA1208 |
High Voltage Switching Transistors |
ON Semiconductor |
1539 |
2SA1208 |
High-Voltage Switching Audio 80W Output Predriver Applications |
SANYO |
1540 |
2SA1209 |
160V/140mA High-Voltage Switching and AF 100W Predriver Applications |
SANYO |
1541 |
2SA1209 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
1542 |
2SA1358 |
Trans GP BJT PNP 120V 1A 3-Pin TO-126IS |
New Jersey Semiconductor |
1543 |
2SA1908 |
Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3PF |
New Jersey Semiconductor |
1544 |
2SA1940 |
Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
1545 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
1546 |
2SA2120 |
Power transistor for high-speed switching applications |
TOSHIBA |
1547 |
2SA747 |
120V PNP silicon transistor |
Sanken |
1548 |
2SA941 |
120V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
1549 |
2SA970 |
Trans GP BJT PNP 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
1550 |
2SA971 |
Trans GP BJT PNP 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
1551 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
1552 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
1553 |
2SB1120 |
PNP/NPN Epitaxial Planar Silicon Transistors High-Current Driver Applications |
SANYO |
1554 |
2SB1201 |
PNP Epitaxial Planar Silicon Transistors High-Current Switching Applications |
SANYO |
1555 |
2SB1202 |
PNP Epitaxial Planar Silicon Transistors High-Current Switching Applications |
SANYO |
1556 |
2SB1203 |
High-Current Switching Applications |
SANYO |
1557 |
2SB1204 |
Bipolar Transistor, -50V, -8A, Low VCE(sat), PNP Single TP/TP-FA |
ON Semiconductor |
1558 |
2SB1204 |
PNP Epitaxial Planar Silicon Transistors |
SANYO |
1559 |
2SB1205 |
PNP Epitaxial Planar Silicon Transistor Strobe High-Current Switching Applications |
SANYO |
1560 |
2SB1207 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
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