| No. |
Part Name |
Description |
Manufacturer |
| 1561 |
2SB1208 |
Transistor - Silicon PNP Epitaxial Planar Type |
Panasonic |
| 1562 |
2SB1209 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1563 |
2SB1340 |
Power Transistor (120V/ -6A) |
ROHM |
| 1564 |
2SB631 |
PNP Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 1565 |
2SB631K |
PNP Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 1566 |
2SB688 |
POWER TRANSISTORS(8A,120V,80W) |
MOSPEC Semiconductor |
| 1567 |
2SC1120 |
Industrial Transistor Specification Table |
TOSHIBA |
| 1568 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 1569 |
2SC1200 |
Industrial Transistor Specification Table |
TOSHIBA |
| 1570 |
2SC1200 |
Silicon NPN epitaxial planar microwave transistor, UHF-S band power amplifier or oscillator applications |
TOSHIBA |
| 1571 |
2SC1205 |
Transistor - JEIDA series |
National Semiconductor |
| 1572 |
2SC1209 |
Medium Power Amplifiers and Switches |
Unknow |
| 1573 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 1574 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 1575 |
2SC1940 |
Trans GP BJT NPN 120V 0.05A 3-Pin SP-8 |
New Jersey Semiconductor |
| 1576 |
2SC2120 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Power Amplifier Applications |
TOSHIBA |
| 1577 |
2SC2120-O |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 1578 |
2SC2120-Y |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 1579 |
2SC2245 |
Trans GP BJT NPN 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 1580 |
2SC3120 |
Transistor |
TOSHIBA |
| 1581 |
2SC3139 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080120-28 is also the datasheet of 2SC3139, see the Electrical Characteristics table) |
NEC |
| 1582 |
2SC3245 |
900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 |
Isahaya Electronics Corporation |
| 1583 |
2SC3756-1200V |
Silicon NPN Power Transistors TO-3PML package |
Savantic |
| 1584 |
2SC3928A |
200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 |
Isahaya Electronics Corporation |
| 1585 |
2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 |
Isahaya Electronics Corporation |
| 1586 |
2SC4256 |
NPN Triple Diffused Planar Silicon Transistor 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 1587 |
2SC4257 |
NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 1588 |
2SC4632LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 1589 |
2SC4633LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 1590 |
2SC4849 |
HIGH-VOLTAGE SWITCHING TRANSISTOR (POWER SUPPLY) ( 120V/ 7A) |
ROHM |
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