| No. |
Part Name |
Description |
Manufacturer |
| 1441 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 1442 |
2N4120 |
P-Channel MOS (Field-Effect Transistor) |
Motorola |
| 1443 |
2N4346 |
Trans GP BJT NPN 120V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 1444 |
2N4348 |
Trans GP BJT NPN 120V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 1445 |
2N4863 |
Trans GP BJT NPN 120V 2A 3-Pin TO-5 |
New Jersey Semiconductor |
| 1446 |
2N4864 |
Trans GP BJT NPN 120V 2A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 1447 |
2N5006 |
HIGH SPEED NPN TRANSISTOR 120 VOLTS |
Solid State Devices Inc |
| 1448 |
2N5008 |
HIGH SPEED NPN TRANSISTOR 120 VOLTS |
Solid State Devices Inc |
| 1449 |
2N5089 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE |
Continental Device India Limited |
| 1450 |
2N5207 |
1200V 22A Phase Control SCR in a TO-208AA (TO-48) package |
International Rectifier |
| 1451 |
2N5237 |
Trans GP BJT NPN 120V 10A 3-Pin TO-5 |
New Jersey Semiconductor |
| 1452 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 1453 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 1454 |
2N5400 |
0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE |
Continental Device India Limited |
| 1455 |
2N5400 |
Trans GP BJT PNP 120V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 1456 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1457 |
2N540A |
Trans GP BJT PNP 120V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 1458 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 1459 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
| 1460 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 1461 |
2N5630 |
Trans GP BJT NPN 120V 16A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 1462 |
2N5633 |
Trans GP BJT NPN 120V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 1463 |
2N5659 |
HIGH SPEED NPN TRANSISTOR 120 VOLTS |
Solid State Devices Inc |
| 1464 |
2N5672 |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 1465 |
2N5672MP |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 1466 |
2N5672S |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 1467 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 1468 |
2N5680 |
Trans GP BJT PNP 120V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
| 1469 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 1470 |
2N5682 |
Trans GP BJT NPN 120V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
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