| No. |
Part Name |
Description |
Manufacturer |
| 1411 |
2SC5058S |
25V,50mA, 300MHz high-frequency amplifier transistor |
ROHM |
| 1412 |
2SC5245A |
RF Transistor, 10V, 30mA, fT=8GHz, NPN Single MCP |
ON Semiconductor |
| 1413 |
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. |
Isahaya Electronics Corporation |
| 1414 |
2SC5551A |
RF Transistor, 30V, 300mA, fT=3.5GHz, NPN Single PCP |
ON Semiconductor |
| 1415 |
2SC5551A |
RF Transistor, 30V, 300mA, fT=3.5GHz, NPN Single PCP |
ON Semiconductor |
| 1416 |
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
Isahaya Electronics Corporation |
| 1417 |
2SC792 |
Silicon NPN triple diffused MESA transistor 300V 1.5A |
TOSHIBA |
| 1418 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
| 1419 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
| 1420 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
| 1421 |
2SCR512P5 |
NPN 30V 2A Medium Power Transistor |
ROHM |
| 1422 |
2SCR512P5T100 |
NPN 30V 2A Medium Power Transistor |
ROHM |
| 1423 |
2SCR542F3 |
NPN 3.0A 30V Middle Power Transistor |
ROHM |
| 1424 |
2SCR542F3TL |
NPN 3.0A 30V Middle Power Transistor |
ROHM |
| 1425 |
2SCR552P5 |
NPN 30V 3A Medium Power Transistor |
ROHM |
| 1426 |
2SCR552P5T100 |
NPN 30V 3A Medium Power Transistor |
ROHM |
| 1427 |
2SD1212 |
NPN Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications |
SANYO |
| 1428 |
2SD1213 |
NPN Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications |
SANYO |
| 1429 |
2SD1235 |
NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications |
SANYO |
| 1430 |
2SD1415 |
7A; 30W; V(ceo): 100V; NPN darlington transistor |
TOSHIBA |
| 1431 |
2SD1416 |
7A; 30W; V(ceo): 80V; NPN darlington transistor |
TOSHIBA |
| 1432 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
| 1433 |
2SD1903 |
NPN Epitaxial Planar Silicon Transistors 30V/8A High-Current Switching Applications |
SANYO |
| 1434 |
2SD1940 |
NPN Epitaxial Planar Silicon Transistor 85V/6A, AF 25 to 30W Output Applications |
SANYO |
| 1435 |
2SD2219 |
NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications |
SANYO |
| 1436 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
| 1437 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
| 1438 |
2SD2285 |
NPN Epitaxial Planar Silicon Transistors 30V/20A High-Current Switching Applications |
SANYO |
| 1439 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 1440 |
2SD796 |
Trans Darlington Power Transistor 300V 6A |
New Jersey Semiconductor |
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