No. |
Part Name |
Description |
Manufacturer |
1351 |
2N6719 |
0.850W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 25 - hFE |
Continental Device India Limited |
1352 |
2N6726 |
0.850W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 2.000A Ic, 55 - hFE |
Continental Device India Limited |
1353 |
2N6726 |
Trans GP BJT PNP 30V 2A 3-Pin(3+Tab) TO-237 Box |
New Jersey Semiconductor |
1354 |
2N6738 |
Trans GP BJT NPN 300V 10A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
1355 |
2N6765 |
N-Channel Power MOSFETs/ 30A/ 150V/200V |
Fairchild Semiconductor |
1356 |
2N6766 |
N-Channel Power MOSFETs/ 30A/ 150V/200V |
Fairchild Semiconductor |
1357 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
1358 |
2N6766 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE |
New Jersey Semiconductor |
1359 |
2N6766 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A |
Siliconix |
1360 |
2N6766BX5 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE |
New Jersey Semiconductor |
1361 |
2N685 |
25A silicon controlled rectifier. Vrsom 300V. |
General Electric Solid State |
1362 |
2N687 |
Thyristor SCR 300V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
1363 |
2N687A |
Thyristor SCR 300V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
1364 |
2N6962 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 30A, Parametric limits in accordance with MIL-S-19500/568 where applicable |
Siliconix |
1365 |
2N6963 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A |
Siliconix |
1366 |
2N6985 |
125W 30 to 400MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
1367 |
2N6986 |
100W 30 to 500MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
1368 |
2N7002 |
60 V, 300 mA N-channel Trench MOSFET |
Nexperia |
1369 |
2N7002 |
60 V, 300 mA N-channel Trench MOSFET |
NXP Semiconductors |
1370 |
2N7002BKS |
60 V, 300 mA dual N-channel Trench MOSFET |
Nexperia |
1371 |
2N7002BKS |
60 V, 300 mA dual N-channel Trench MOSFET |
NXP Semiconductors |
1372 |
2N7025 |
MOSPOWER P-Channel Enhancement Mode Transistor 30V 0.18A |
Siliconix |
1373 |
2N7026 |
MOSPOWER P-Channel Enhancement Mode Transistor 30V 0.12A |
Siliconix |
1374 |
2N7027 |
MOSPOWER P-Channel Enhancement Mode Transistor 30V 0.11A |
Siliconix |
1375 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
1376 |
2N718 |
Trans GP BJT NPN 30V 0.5A 3-Pin TO-18 |
New Jersey Semiconductor |
1377 |
2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads. |
International Rectifier |
1378 |
2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads. |
International Rectifier |
1379 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
1380 |
2SA1050 |
Trans GP BJT PNP 30V 0.1A 3-Pin MPAK |
New Jersey Semiconductor |
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