No. |
Part Name |
Description |
Manufacturer |
1231 |
2N5060 |
Thyristor SCR 30V 10A 3-Pin TO-92 |
New Jersey Semiconductor |
1232 |
2N5081 |
Trans GP BJT NPN 30V 0.1A 3-Pin TO-92 Ammo |
New Jersey Semiconductor |
1233 |
2N5088 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE |
Continental Device India Limited |
1234 |
2N5088 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE |
Continental Device India Limited |
1235 |
2N5088 |
Trans GP BJT NPN 30V 0.05A 3-Pin TO-92 Box |
New Jersey Semiconductor |
1236 |
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
1237 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
1238 |
2N508A |
Trans GP BJT NPN 30V 0.1A 3-Pin TO-92 Ammo |
New Jersey Semiconductor |
1239 |
2N5114 |
Trans JFET P-CH 30V 3-Pin TO-18 |
New Jersey Semiconductor |
1240 |
2N5115 |
Trans JFET P-CH 30V 3-Pin TO-18 |
New Jersey Semiconductor |
1241 |
2N5116 |
Trans JFET P-CH 30V 3-Pin TO-18 |
New Jersey Semiconductor |
1242 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
1243 |
2N5240 |
Trans GP BJT NPN 300V 5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1244 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
1245 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
1246 |
2N5301 |
Trans GP BJT NPN 40V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1247 |
2N5301 |
40 V, 30 A, 200 W, NPN silicon power transistor |
Texas Instruments |
1248 |
2N5302 |
Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1249 |
2N5302 |
60 V, 30 A, 200 W, NPN silicon power transistor |
Texas Instruments |
1250 |
2N5302G |
Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-204 Tray |
New Jersey Semiconductor |
1251 |
2N5302HS |
Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1252 |
2N5303 |
80 V, 30 A, 200 W, NPN silicon power transistor |
Texas Instruments |
1253 |
2N5305 |
Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1254 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
1255 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
1256 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
1257 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
1258 |
2N5309 |
Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1259 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
1260 |
2N5330 |
Trans GP BJT NPN 90V 30A 3-Pin TO-61 |
New Jersey Semiconductor |
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