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Datasheets for 30

Datasheets found :: 56431
Page: | 38 | 39 | 40 | 41 | 42 | 43 | 44 | 45 | 46 |
No. Part Name Description Manufacturer
1231 2N5060 Thyristor SCR 30V 10A 3-Pin TO-92 New Jersey Semiconductor
1232 2N5081 Trans GP BJT NPN 30V 0.1A 3-Pin TO-92 Ammo New Jersey Semiconductor
1233 2N5088 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE Continental Device India Limited
1234 2N5088 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE Continental Device India Limited
1235 2N5088 Trans GP BJT NPN 30V 0.05A 3-Pin TO-92 Box New Jersey Semiconductor
1236 2N5088 Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1237 2N5089 Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1238 2N508A Trans GP BJT NPN 30V 0.1A 3-Pin TO-92 Ammo New Jersey Semiconductor
1239 2N5114 Trans JFET P-CH 30V 3-Pin TO-18 New Jersey Semiconductor
1240 2N5115 Trans JFET P-CH 30V 3-Pin TO-18 New Jersey Semiconductor
1241 2N5116 Trans JFET P-CH 30V 3-Pin TO-18 New Jersey Semiconductor
1242 2N5208 PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz Motorola
1243 2N5240 Trans GP BJT NPN 300V 5A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
1244 2N5294 36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. Continental Device India Limited
1245 2N5296 36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. Continental Device India Limited
1246 2N5301 Trans GP BJT NPN 40V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
1247 2N5301 40 V, 30 A, 200 W, NPN silicon power transistor Texas Instruments
1248 2N5302 Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
1249 2N5302 60 V, 30 A, 200 W, NPN silicon power transistor Texas Instruments
1250 2N5302G Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-204 Tray New Jersey Semiconductor
1251 2N5302HS Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
1252 2N5303 80 V, 30 A, 200 W, NPN silicon power transistor Texas Instruments
1253 2N5305 Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
1254 2N5306 Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. General Electric Solid State
1255 2N5307 Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
1256 2N5308 Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
1257 2N5308A Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
1258 2N5309 Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
1259 2N5320 10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. Continental Device India Limited
1260 2N5330 Trans GP BJT NPN 90V 30A 3-Pin TO-61 New Jersey Semiconductor


Datasheets found :: 56431
Page: | 38 | 39 | 40 | 41 | 42 | 43 | 44 | 45 | 46 |



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