No. |
Part Name |
Description |
Manufacturer |
1261 |
2N5330 |
150 V, 30 A high speed NPN transistor |
Solid State Devices Inc |
1262 |
2N5366 |
Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. |
General Electric Solid State |
1263 |
2N539 |
Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1264 |
2N5415 |
1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
1265 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
1266 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
1267 |
2N5416 |
Trans GP BJT PNP 300V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
1268 |
2N5416S |
Trans GP BJT PNP 300V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
1269 |
2N5416SB |
Trans GP BJT PNP 300V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
1270 |
2N5416SGGGJ |
Trans GP BJT PNP 300V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
1271 |
2N5486 |
Trans JFET N-CH 30mA Si 3-Pin TO-92 |
New Jersey Semiconductor |
1272 |
2N5487 |
Trans JFET N-CH 30mA Si 3-Pin TO-92 |
New Jersey Semiconductor |
1273 |
2N5488 |
Trans JFET N-CH 30mA Si 3-Pin TO-92 |
New Jersey Semiconductor |
1274 |
2N5642 |
V(ceo): 35V; V(cb): 65V; V(eb): 4V; 3A; 30W; NPN silicon RF power transistor |
Motorola |
1275 |
2N5642 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 30W; VHF power transistor |
SGS Thomson Microelectronics |
1276 |
2N5656 |
Trans GP BJT NPN 300V 1A 3-Pin TO-126 Box |
New Jersey Semiconductor |
1277 |
2N5661 |
Trans GP BJT NPN 300V 2A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
1278 |
2N5663 |
Trans GP BJT NPN 300V 2A 3-Pin TO-5 |
New Jersey Semiconductor |
1279 |
2N5665 |
Trans GP BJT NPN 300V 5A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
1280 |
2N5667 |
Trans GP BJT NPN 300V 5A 3-Pin TO-5 |
New Jersey Semiconductor |
1281 |
2N5671 |
Trans GP BJT NPN 90V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1282 |
2N5672 |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1283 |
2N5672MP |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1284 |
2N5672S |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1285 |
2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor |
SemeLAB |
1286 |
2N5683 |
50A complementary silicon high-current, power PNP transistor 300W |
Motorola |
1287 |
2N5684 |
50A complementary silicon high-current, power PNP transistor 300W |
Motorola |
1288 |
2N5685 |
50A complementary silicon high-current, power NPN transistor 300W |
Motorola |
1289 |
2N5686 |
50A complementary silicon high-current, power NPN transistor 300W |
Motorola |
1290 |
2N5941 |
NPN silicon RF power transistor 40W (PEP) 30MHz |
Motorola |
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