No. |
Part Name |
Description |
Manufacturer |
1171 |
2N3771 |
Trans GP BJT NPN 40V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1172 |
2N3771 |
Power 30A 40V Discrete NPN |
ON Semiconductor |
1173 |
2N3771 |
Power 30A 40V Discrete NPN |
ON Semiconductor |
1174 |
2N3771 |
50 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
1175 |
2N3771G |
Trans GP BJT NPN 40V 30A 3-Pin(2+Tab) TO-204 Tray |
New Jersey Semiconductor |
1176 |
2N3772 |
100 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
1177 |
2N3823 |
Trans JFET N-CH 30V 3-Pin TO-72 |
New Jersey Semiconductor |
1178 |
2N3847 |
Trans GP BJT NPN 300V 20A 3-Pin TO-63 |
New Jersey Semiconductor |
1179 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
1180 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
1181 |
2N3866 |
Trans GP BJT NPN 30V 0.4A 3-Pin TO-39 |
New Jersey Semiconductor |
1182 |
2N389 |
Trans GP BJT NPN 30V 0.4A 3-Pin TO-39 |
New Jersey Semiconductor |
1183 |
2N3904-T18 |
40V Vce, 0.2A Ic, 300MHz NPN bipolar transistor |
SemeLAB |
1184 |
2N3905 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 30 - hFE |
Continental Device India Limited |
1185 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
1186 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
1187 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
1188 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
1189 |
2N4013 |
Trans GP BJT NPN 30V 3-Pin TO-18 Box |
New Jersey Semiconductor |
1190 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
1191 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
1192 |
2N4058 |
Trans GP BJT PNP 30V 0.2A 3-Pin TO-92 Box |
New Jersey Semiconductor |
1193 |
2N4059 |
Trans GP BJT PNP 30V 0.2A 3-Pin TO-92 |
New Jersey Semiconductor |
1194 |
2N4060 |
Trans GP BJT PNP 30V 0.2A 3-Pin TO-92 |
New Jersey Semiconductor |
1195 |
2N4063 |
Trans GP BJT PNP 30V 0.2A 3-Pin TO-92 |
New Jersey Semiconductor |
1196 |
2N4064 |
Trans GP BJT PNP 30V 0.2A 3-Pin TO-92 |
New Jersey Semiconductor |
1197 |
2N4091 |
Trans JFET N-CH 40V 30mA 3-Pin TO-18 |
New Jersey Semiconductor |
1198 |
2N4091A |
Trans JFET N-CH 40V 30mA 3-Pin TO-18 |
New Jersey Semiconductor |
1199 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
1200 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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