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Datasheets for 30

Datasheets found :: 56431
Page: | 36 | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 |
No. Part Name Description Manufacturer
1171 2N3771 Trans GP BJT NPN 40V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
1172 2N3771 Power 30A 40V Discrete NPN ON Semiconductor
1173 2N3771 Power 30A 40V Discrete NPN ON Semiconductor
1174 2N3771 50 V, 30 A, 150 W, NPN silicon power transistor Texas Instruments
1175 2N3771G Trans GP BJT NPN 40V 30A 3-Pin(2+Tab) TO-204 Tray New Jersey Semiconductor
1176 2N3772 100 V, 30 A, 150 W, NPN silicon power transistor Texas Instruments
1177 2N3823 Trans JFET N-CH 30V 3-Pin TO-72 New Jersey Semiconductor
1178 2N3847 Trans GP BJT NPN 300V 20A 3-Pin TO-63 New Jersey Semiconductor
1179 2N3859 Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. General Electric Solid State
1180 2N3860 Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. General Electric Solid State
1181 2N3866 Trans GP BJT NPN 30V 0.4A 3-Pin TO-39 New Jersey Semiconductor
1182 2N389 Trans GP BJT NPN 30V 0.4A 3-Pin TO-39 New Jersey Semiconductor
1183 2N3904-T18 40V Vce, 0.2A Ic, 300MHz NPN bipolar transistor SemeLAB
1184 2N3905 0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 30 - hFE Continental Device India Limited
1185 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
1186 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
1187 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
1188 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
1189 2N4013 Trans GP BJT NPN 30V 3-Pin TO-18 Box New Jersey Semiconductor
1190 2N4032 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
1191 2N4033 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
1192 2N4058 Trans GP BJT PNP 30V 0.2A 3-Pin TO-92 Box New Jersey Semiconductor
1193 2N4059 Trans GP BJT PNP 30V 0.2A 3-Pin TO-92 New Jersey Semiconductor
1194 2N4060 Trans GP BJT PNP 30V 0.2A 3-Pin TO-92 New Jersey Semiconductor
1195 2N4063 Trans GP BJT PNP 30V 0.2A 3-Pin TO-92 New Jersey Semiconductor
1196 2N4064 Trans GP BJT PNP 30V 0.2A 3-Pin TO-92 New Jersey Semiconductor
1197 2N4091 Trans JFET N-CH 40V 30mA 3-Pin TO-18 New Jersey Semiconductor
1198 2N4091A Trans JFET N-CH 40V 30mA 3-Pin TO-18 New Jersey Semiconductor
1199 2N4123 Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. General Electric Solid State
1200 2N4123 General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD


Datasheets found :: 56431
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