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Datasheets for 30

Datasheets found :: 56431
Page: | 40 | 41 | 42 | 43 | 44 | 45 | 46 | 47 | 48 |
No. Part Name Description Manufacturer
1291 2N6027 Silicon Programmable Unijunction Transistor 40V 300mW Motorola
1292 2N6028 Silicon Programmable Unijunction Transistor 40V 300mW Motorola
1293 2N6072 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
1294 2N6072A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
1295 2N6072B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
1296 2N6083 NPN silicon RF power transistor 30W - 175MHz Motorola
1297 2N6109 40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. Continental Device India Limited
1298 2N6110 Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-213AA New Jersey Semiconductor
1299 2N6111 40.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Continental Device India Limited
1300 2N6111 40.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Continental Device India Limited
1301 2N6111 Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
1302 2N6111 Power 7A 30V Discrete PNP ON Semiconductor
1303 2N6114 Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
1304 2N6115 Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor
1305 2N6212 Trans GP BJT PNP 300V 5A 3-Pin(2+Tab) TO-66 Sleeve New Jersey Semiconductor
1306 2N6249 300V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
1307 2N6250 375V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
1308 2N6251 450V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
1309 2N6266 10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note RCA Solid State
1310 2N6267 10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note RCA Solid State
1311 2N6288 40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 Continental Device India Limited
1312 2N6288 40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 Continental Device India Limited
1313 2N6288 Power 7A 30V Discrete NPN ON Semiconductor
1314 2N6322 200 V, 30 A NPN high voltage/high energy Solid State Devices Inc
1315 2N6324 200 V, 30 A NPN high voltage/high energy Solid State Devices Inc
1316 2N6339 Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
1317 2N6340 Trans GP BJT NPN 140V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
1318 2N6340A Trans GP BJT NPN 140V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
1319 2N6367 NPN silicon RF power transistor 9W (PEP) 12.5V, up to 30MHz Motorola
1320 2N6370 NPN silicon RF power transistor 10W (PEP) 30MHz Motorola


Datasheets found :: 56431
Page: | 40 | 41 | 42 | 43 | 44 | 45 | 46 | 47 | 48 |



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