No. |
Part Name |
Description |
Manufacturer |
1291 |
2N6027 |
Silicon Programmable Unijunction Transistor 40V 300mW |
Motorola |
1292 |
2N6028 |
Silicon Programmable Unijunction Transistor 40V 300mW |
Motorola |
1293 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
1294 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
1295 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
1296 |
2N6083 |
NPN silicon RF power transistor 30W - 175MHz |
Motorola |
1297 |
2N6109 |
40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
1298 |
2N6110 |
Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-213AA |
New Jersey Semiconductor |
1299 |
2N6111 |
40.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
1300 |
2N6111 |
40.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
1301 |
2N6111 |
Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
1302 |
2N6111 |
Power 7A 30V Discrete PNP |
ON Semiconductor |
1303 |
2N6114 |
Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
1304 |
2N6115 |
Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
1305 |
2N6212 |
Trans GP BJT PNP 300V 5A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
1306 |
2N6249 |
300V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
1307 |
2N6250 |
375V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
1308 |
2N6251 |
450V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
1309 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
1310 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
1311 |
2N6288 |
40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 |
Continental Device India Limited |
1312 |
2N6288 |
40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 |
Continental Device India Limited |
1313 |
2N6288 |
Power 7A 30V Discrete NPN |
ON Semiconductor |
1314 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
1315 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
1316 |
2N6339 |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1317 |
2N6340 |
Trans GP BJT NPN 140V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1318 |
2N6340A |
Trans GP BJT NPN 140V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1319 |
2N6367 |
NPN silicon RF power transistor 9W (PEP) 12.5V, up to 30MHz |
Motorola |
1320 |
2N6370 |
NPN silicon RF power transistor 10W (PEP) 30MHz |
Motorola |
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