| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N4373 |
Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts |
Powerex Power Semiconductors |
| 152 |
2N4374 |
Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts |
Powerex Power Semiconductors |
| 153 |
2N4375 |
Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts |
Powerex Power Semiconductors |
| 154 |
2N4376 |
Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts |
Powerex Power Semiconductors |
| 155 |
2N4377 |
Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts |
Powerex Power Semiconductors |
| 156 |
2N4378 |
Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts |
Powerex Power Semiconductors |
| 157 |
2N5038 |
20A NPN silicon power metal transistor 90V 140W |
Motorola |
| 158 |
2N5039 |
20A NPN Silicon Power Metal Transistor 75V 140W |
Motorola |
| 159 |
2N5550 |
0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE |
Continental Device India Limited |
| 160 |
2N5550 |
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 161 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 162 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
| 163 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 164 |
2N5631 |
Trans GP BJT NPN 140V 16A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 165 |
2N5631 |
NPN transistor, 140V, 16A |
SemeLAB |
| 166 |
2N5634 |
Trans GP BJT NPN 140V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 167 |
2N5831 |
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 |
New Jersey Semiconductor |
| 168 |
2N5832 |
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 |
New Jersey Semiconductor |
| 169 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 170 |
2N6031 |
Trans GP BJT PNP 140V 16A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 171 |
2N6228 |
6A, high-voltage, high-power PNP silicon transistor 150W 140V |
Motorola |
| 172 |
2N6228 |
Trans GP BJT PNP 140V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 173 |
2N6231 |
Trans GP BJT PNP 140V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 174 |
2N6263 |
Medium power silicon N-P-N transistor. 140V, 20W. |
General Electric Solid State |
| 175 |
2N6280 |
50A High-power NPN silicon transistor 140V 250W |
Motorola |
| 176 |
2N6340 |
Trans GP BJT NPN 140V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 177 |
2N6340A |
Trans GP BJT NPN 140V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 178 |
2N6354 |
120V, 10A, 140W silicon N-P-N planar transistor. |
General Electric Solid State |
| 179 |
2N6609 |
16A complementary power transistor 140V 150W |
Motorola |
| 180 |
2N6609 |
Trans GP BJT PNP 140V 16A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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