| No. |
Part Name |
Description |
Manufacturer |
| 241 |
AFE58JD18ZBV |
16-Channel, Ultrasound, Analog Front-End with 140-mW/Channel Power, 0.75-nV/?Hz. 289-NFBGA -40 to 85 |
Texas Instruments |
| 242 |
AM1416-001 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 243 |
AM1416-003 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 244 |
AM50-0004 |
High Dynamic Range Low Noise Amplifier 1400-2000 MHz |
Tyco Electronics |
| 245 |
AM50-0004RTR |
High Dynamic Range Low Noise Amplifier 1400-2000 MHz |
Tyco Electronics |
| 246 |
AM50-0004SMB |
High Dynamic Range Low Noise Amplifier 1400-2000 MHz |
Tyco Electronics |
| 247 |
AM50-0004TR |
High Dynamic Range Low Noise Amplifier 1400-2000 MHz |
Tyco Electronics |
| 248 |
AM50-0006 |
Low Noise Amplifier 1400 - 2000 MHz |
Tyco Electronics |
| 249 |
AM50-0006PCS |
Low Noise Amplifier 1400 - 2000 MHz |
Tyco Electronics |
| 250 |
AM50-0006PDC |
Low Noise Amplifier 1400 - 2000 MHz |
Tyco Electronics |
| 251 |
AM50-0006TR |
Low Noise Amplifier 1400 - 2000 MHz |
Tyco Electronics |
| 252 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 253 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 254 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 255 |
APT100GF60JRD |
Fast IGBT & FRED 600V 140A |
Advanced Power Technology |
| 256 |
AQZ204V |
Power photoMOS relay with internal varistor. AC/DC type. Output rating: load voltage 140 V AC, 180 V DC, load current 0.5 A. |
Matsushita Electric Works(Nais) |
| 257 |
BC300-5 |
0.850W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 70 - 140 hFE. |
Continental Device India Limited |
| 258 |
BC301-5 |
0.850W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.500A Ic, 70 - 140 hFE. |
Continental Device India Limited |
| 259 |
BC302-5 |
0.850W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.500A Ic, 70 - 140 hFE. |
Continental Device India Limited |
| 260 |
BC303-5 |
0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 70 - 140 hFE. |
Continental Device India Limited |
| 261 |
BDW14 |
15A NPN silicon power transistor 180W 140V |
Motorola |
| 262 |
BDW14A |
15A NPN silicon power transistor 180W 140V |
Motorola |
| 263 |
BDW34 |
NPN silicon power transistor 30A 250W 140V |
Motorola |
| 264 |
BDY25 |
Trans GP BJT NPN 140V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 265 |
BDY25A |
Trans GP BJT NPN 140V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 266 |
BDY25B |
Trans GP BJT NPN 140V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 267 |
BDY25C |
Trans GP BJT NPN 140V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 268 |
BDY25SB |
Trans GP BJT NPN 140V 6A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 269 |
BP14104 |
βP14104 Bipolar microprocessor 14000 series |
IPRS Baneasa |
| 270 |
BP14113 |
βP14113 Bipolar microprocessor 14000 series |
IPRS Baneasa |
| | | |
