No. |
Part Name |
Description |
Manufacturer |
181 |
2N6609 |
Power 16A 140V Discrete PNP |
ON Semiconductor |
182 |
2SA1265 |
Trans GP BJT PNP 140V 10A |
New Jersey Semiconductor |
183 |
2SA1909 |
Trans GP BJT PNP 140V 10A 3-Pin(3+Tab) TO-3PF |
New Jersey Semiconductor |
184 |
2SA1941 |
Trans GP BJT PNP 140V 10A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
185 |
2SB1490 |
Trans Darlington PNP 140V 7A |
New Jersey Semiconductor |
186 |
2SB1503 |
Trans Darlington PNP 140V 8A |
New Jersey Semiconductor |
187 |
2SB817 |
PNP Epitaxial Planar Silicon Transistors 140V/12A AF 60W Output Applications |
SANYO |
188 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
189 |
2SD1047 |
NPN Triple Diffused Planar Silicon Transistors 140V/12A AF 60W Output Applications |
SANYO |
190 |
320PJT200A |
V(rrm/drm): 2000V; 1400A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
191 |
320PJT250A |
V(rrm/drm): 2500V; 1400A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
192 |
350PJT140 |
V(rrm/drm): 1400V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
193 |
3EZ140D |
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
194 |
3EZ140D1 |
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
195 |
3EZ140D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 140 V. 1% tolerance. |
Motorola |
196 |
3EZ140D10 |
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
197 |
3EZ140D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 140 V. 10% tolerance. |
Motorola |
198 |
3EZ140D2 |
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
199 |
3EZ140D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 140 V. 2% tolerance. |
Motorola |
200 |
3EZ140D3 |
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
201 |
3EZ140D4 |
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
202 |
3EZ140D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 140 V. |
Motorola |
203 |
600PE140 |
V(rrm/drm): 1400V; 940A RMS hockey puk thyristor |
International Rectifier |
204 |
81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
205 |
81416-20 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
206 |
81416-6 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
207 |
AD5300 |
2.7 V to 5.5 V, 140 �A, Rail-to-Rail Voltage Output 8-Bit DAC in SOT-23 and MicroSOIC Packages |
Analog Devices |
208 |
AD5300BCHIPS |
2.7 V to 5.5 V, 140 µA, Rail-to-Rail Voltage Output 8-Bit DAC in SOT-23 and MicroSOIC Packages |
Analog Devices |
209 |
AD5300BRM |
+2.7 V to +5.5 V, 140 uA, Rail-to-Rail Output 8-Bit DAC in an SOT-23 |
Analog Devices |
210 |
AD5300BRT |
+2.7 V to +5.5 V, 140 uA, Rail-to-Rail Output 8-Bit DAC in an SOT-23 |
Analog Devices |
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