| No. |
Part Name |
Description |
Manufacturer |
| 151 |
SPN03N60S5 |
for lowest Conduction Losses |
Infineon |
| 152 |
SPP03N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 153 |
SPP03N60S5 |
for lowest Conduction Losses |
Infineon |
| 154 |
SPU03N60S5 |
for lowest Conduction Losses |
Infineon |
| 155 |
STB13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 156 |
STB33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in D2PAK package |
ST Microelectronics |
| 157 |
STB3N60-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 158 |
STB3N60-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 159 |
STD13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
| 160 |
STD3N62K3 |
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 161 |
STEVAL-ILB009V1 |
2 x 28 W electronic ballast with active PFC based on the STD3N62K3 and STD845DN40 BJT devices |
ST Microelectronics |
| 162 |
STF13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 163 |
STF33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-220FP package |
ST Microelectronics |
| 164 |
STF3N62K3 |
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 165 |
STFI13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 166 |
STI33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in I2PAK package |
ST Microelectronics |
| 167 |
STL13N60M2 |
N-channel 600 V, 0.39 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in a PowerFLAT 5x6 HV package |
ST Microelectronics |
| 168 |
STL33N60M2 |
N-channel 600 V, 0.115 Ohm typ., 21.5 A MDmesh M2 Power MOSFET in a PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 169 |
STP13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
| 170 |
STP33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-220 package |
ST Microelectronics |
| 171 |
STU13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package |
ST Microelectronics |
| 172 |
STU3N62K3 |
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in IPAK package |
ST Microelectronics |
| 173 |
STW13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-247 package |
ST Microelectronics |
| 174 |
STW33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-247 package |
ST Microelectronics |
| 175 |
T3N6 |
Mains frequency thyristor 3A |
IPRS Baneasa |
| 176 |
T3N6 |
3 AMPS 600V THYRISTOR |
IPRS Baneasa |
| 177 |
T3N6C |
Mains frequency thyristor 3A |
IPRS Baneasa |
| 178 |
T3N6D |
Mains frequency thyristor 3A |
IPRS Baneasa |
| 179 |
T3N6G |
Mains frequency thyristor 3A |
IPRS Baneasa |
| 180 |
T3N6K |
Mains frequency thyristor 3A |
IPRS Baneasa |
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