No. |
Part Name |
Description |
Manufacturer |
91 |
LZ93N61 |
Timing Pulse Generator LSI for CCD |
SHARP |
92 |
MTB3N60E |
TMOS POWER FET 3.0 AMPERES 600 VOLTS |
Motorola |
93 |
MTB3N60E |
D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
94 |
MTB3N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
95 |
MTM3N60 |
N-CHANNEL TMOS POWER FET 3A 600V 2.5 ohms |
Motorola |
96 |
MTP3N60 |
N-CHANNEL TMOS POWER FET 3A 600V 2.5 ohms |
Motorola |
97 |
MTP3N60 |
Trans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
98 |
MTP3N60 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
99 |
MTP3N60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
100 |
MTP3N60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
101 |
MTP3N60E |
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS |
Motorola |
102 |
MTP3N60E |
Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
103 |
MTP3N60E |
3 Amp TO-220AB, N-Channel, VDSS 600 |
ON Semiconductor |
104 |
MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
105 |
MTP3N60F1 |
Trans MOSFET N-CH 600V 2.5A 3-Pin(3+Tab) ISOWATT220 |
New Jersey Semiconductor |
106 |
MTP3N60FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
107 |
MTP3N60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
108 |
MTP3N60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
109 |
MTT63N600 |
Thyristor Power Block |
IPRS Baneasa |
110 |
NB3N65027 |
3.3 V Programmable 3-PLL Clock Synthesizer with 6 LVTTL/LVCMOS Outputs w/OE |
ON Semiconductor |
111 |
NDF03N60Z |
Power MOSFET 600V 3.6 Ohm Single N-Channel |
ON Semiconductor |
112 |
PCG3N60C3W |
6A, 600V, UFS Series N-Channel IGBTs |
Fairchild Semiconductor |
113 |
PHB3N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
114 |
PHP3N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
115 |
PHX3N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
116 |
SGF23N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
117 |
SGF23N60UFD |
Ultra-Fast IGBT |
Fairchild Semiconductor |
118 |
SGF23N60UFDTU |
Discrete, High Performance IGBT |
Fairchild Semiconductor |
119 |
SGF23N60UFTU |
Discrete, High Performance IGBT |
Fairchild Semiconductor |
120 |
SGH13N60UFD |
N-CHANNEL IGBT |
Fairchild Semiconductor |
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