| No. |
Part Name |
Description |
Manufacturer |
| 61 |
HGTP3N60A4D |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Intersil |
| 62 |
HGTP3N60A4_NL |
600V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 63 |
HGTP3N60B3 |
7A, 600V, UFS Series N-Channel IGBTs |
Fairchild Semiconductor |
| 64 |
HGTP3N60B3 |
7A/ 600V/ UFS Series N-Channel IGBTs |
Intersil |
| 65 |
HGTP3N60B3D |
7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Fairchild Semiconductor |
| 66 |
HGTP3N60B3D |
7A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Intersil |
| 67 |
HGTP3N60C3 |
6A, 600V, UFS Series N-Channel IGBTs |
Fairchild Semiconductor |
| 68 |
HGTP3N60C3 |
6A/ 600V/ UFS Series N-Channel IGBTs |
Intersil |
| 69 |
HGTP3N60C3D |
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
Fairchild Semiconductor |
| 70 |
HGTP3N60C3D |
6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
Intersil |
| 71 |
ILA03N60 |
IGBTs & DuoPacks - 3A / 600V LightMOS in TO220 FullPak |
Infineon |
| 72 |
ILB03N60 |
3A / 600V IGBT with monolithically integrated diode for resonant-halfbridge topologies in lighting ballast (40W-120W) |
Infineon |
| 73 |
ILB03N60E3045A |
IGBTs & DuoPacks - 3A / 600V LightMOS in TO263 |
Infineon |
| 74 |
ILD03N60 |
IGBTs & DuoPacks - 3A / 600V LightMOS in DPak |
Infineon |
| 75 |
ILP03N60 |
IGBTs & DuoPacks - 3A / 600V LightMOS in TO220 |
Infineon |
| 76 |
IXFH23N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 77 |
IXTQ23N60Q |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 78 |
K3N6C1000E-GC,TC,YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 79 |
K3N6C3000E-DC |
32M-Bit (4Mx8) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 80 |
K3N6C4000E-DC |
32M-Bit (2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 81 |
K3N6V(U)1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 82 |
K3N6V(U)1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 83 |
K3N6V(U)1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 84 |
K3N6V(U)4000E-DC |
32M-Bit (2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 85 |
KF3N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 86 |
KF3N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 87 |
KF3N60I |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 88 |
LLQ1608-A3N6 |
Chip Inductors |
TOKO |
| 89 |
LLQ1608-F3N6 |
Wirewound Chip Inductors |
TOKO |
| 90 |
LZ93N61 |
Timing Pulse Generator LSI for CCD |
SHARP |
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