| No. |
Part Name |
Description |
Manufacturer |
| 151 |
STU6N65K3 |
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in IPAK package |
ST Microelectronics |
| 152 |
STU6N65M2 |
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package |
ST Microelectronics |
| 153 |
STW16N65M5 |
N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in TO-247 |
ST Microelectronics |
| 154 |
T16N6 |
Mains frequency thyristor |
IPRS Baneasa |
| 155 |
T16N6 |
16 AMPS 600V THYRISTOR |
IPRS Baneasa |
| 156 |
T16N6C |
Mains frequency thyristor |
IPRS Baneasa |
| 157 |
T16N6D |
Mains frequency thyristor |
IPRS Baneasa |
| 158 |
T16N6G |
Mains frequency thyristor |
IPRS Baneasa |
| 159 |
T16N6K |
Mains frequency thyristor |
IPRS Baneasa |
| 160 |
T6N6P |
Mains Frequency Thyristor |
IPRS Baneasa |
| 161 |
TB16N6 |
Bidirectional Thyristor (triac) |
IPRS Baneasa |
| 162 |
TB6N6 |
Bidirectional Thyristor (triac) |
IPRS Baneasa |
| 163 |
TB6N6 |
6Aeff 600V TRIAC |
IPRS Baneasa |
| 164 |
TK16N60W |
Power MOSFET (N-ch 500V<VDSS≤700V) |
TOSHIBA |
| 165 |
TK16N60W5 |
Power MOSFET (N-ch 500V<VDSS≤700V) |
TOSHIBA |
| 166 |
TRS16N65D |
SiC Schottky barrier diode |
TOSHIBA |
| 167 |
TSM6N60CH |
Discrete Devices-MOSFET-Single N-Channel |
Taiwan Semiconductor |
| 168 |
TSM6N60CP |
Discrete Devices-MOSFET-Single N-Channel |
Taiwan Semiconductor |
| 169 |
VC0206N6 |
Complementary Enhancement-Mode Vertical DMOS Power FETs Quad Array |
Supertex Inc |
| 170 |
VN0206N6 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array |
Supertex Inc |
| 171 |
VN0206N6 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 172 |
VP0206N6 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 173 |
VP0206N6 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array |
Supertex Inc |
| | | |
