No. |
Part Name |
Description |
Manufacturer |
61 |
MDD86N600 |
Diode Power Blocks |
IPRS Baneasa |
62 |
MTB6N60 |
TMOS POWER FET 6.0 AMPERES 600 VOLTS |
Motorola |
63 |
MTB6N60E |
TMOS POWER FET 6.0 AMPERES 600 VOLTS |
Motorola |
64 |
MTB6N60E1 |
TMOS POWER FET 6.0 AMPERES 600 VOLTS |
Motorola |
65 |
MTB6N60E1 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
66 |
MTB6N60E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
67 |
MTH6N60 |
Power Field Effect Transistor |
Motorola |
68 |
MTM6N60 |
N-CHANNEL TMOS POWER FET 6A 600V 1.5 ohms |
Motorola |
69 |
MTM6N60 |
Trans MOSFET N-CH 800V 6A |
New Jersey Semiconductor |
70 |
MTP6N60 |
Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
71 |
MTP6N60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
72 |
MTP6N60 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
73 |
MTP6N60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
74 |
MTP6N60E |
TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS |
Motorola |
75 |
MTP6N60E |
Power Field Effect Transistor |
ON Semiconductor |
76 |
MTP6N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
77 |
MTW6N60E |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
Motorola |
78 |
NDF06N60Z |
Power MOSFET, N-Channel, 600 V, 1.2 Ω |
ON Semiconductor |
79 |
NDF06N62Z |
Power MOSFET 620V 1.2 Ohm Single N-Channel |
ON Semiconductor |
80 |
NTP6N60-D |
Power MOSFET 6 Amps, 600 Volts N-Channel TO-220 and D2PAK |
ON Semiconductor |
81 |
PHB6N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
82 |
PHP6N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
83 |
PHX6N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
84 |
PRN10116N6800J |
Bussed Resistor Network |
California Micro Devices Corp |
85 |
PRN10116N6800JR |
BUSSED RESISTOR NETWORK |
California Micro Devices Corp |
86 |
PRN10116N6800JT |
BUSSED RESISTOR NETWORK |
California Micro Devices Corp |
87 |
PRN10116N6801J |
Bussed Resistor Network |
California Micro Devices Corp |
88 |
PRN10116N6801JR |
BUSSED RESISTOR NETWORK |
California Micro Devices Corp |
89 |
PRN10116N6801JT |
BUSSED RESISTOR NETWORK |
California Micro Devices Corp |
90 |
SGB06N60 |
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT |
Infineon |
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