No. |
Part Name |
Description |
Manufacturer |
91 |
SGP6N60UFDTU |
Discrete, High Performance IGBT with Diode |
Fairchild Semiconductor |
92 |
SGR6N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
93 |
SGR6N60UFTF |
Discrete, High Performance IGBT |
Fairchild Semiconductor |
94 |
SGR6N60UFTM |
Discrete, High Performance IGBT |
Fairchild Semiconductor |
95 |
SGS6N60 |
Ultra-Fast IGBT |
Fairchild Semiconductor |
96 |
SGS6N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
97 |
SGS6N60UFD |
Ultra-Fast IGBT |
Fairchild Semiconductor |
98 |
SGS6N60UFDTU |
Discrete, High Performance IGBT with Diode |
Fairchild Semiconductor |
99 |
SGS6N60UFTU |
Discrete, High Performance IGBT |
Fairchild Semiconductor |
100 |
SGU6N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
101 |
SGW6N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
102 |
SGW6N60UFD |
Ultra-Fast IGBT |
Fairchild Semiconductor |
103 |
SGW6N60UFDTM |
Discrete, High Performance IGBT with Diode |
Fairchild Semiconductor |
104 |
SKA06N60 |
IGBTs & DuoPacks - 6A 600V TO220-3-31 (Fullpack) IGBT+Diode |
Infineon |
105 |
SKB06N60 |
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT+Diode |
Infineon |
106 |
SKB06N60HS |
IGBTs & DuoPacks - 6A 600V TO263 IGBT+Diode |
Infineon |
107 |
SKP06N60 |
IGBTs & DuoPacks - 6A 600V TO220AB IGBT+Diode |
Infineon |
108 |
SKP06N60 |
Fast S-IGBT in NPT-Technology with An... |
Infineon |
109 |
SPA06N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
110 |
SPD06N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
111 |
SPP06N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
112 |
SSP6N60 |
N-Channel Power MOSFET |
Samsung Electronic |
113 |
STB16N65M5 |
N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in D2PAK |
ST Microelectronics |
114 |
STB6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
115 |
STB6N62K3 |
N-channel 620 V, 0.95 Ohm typ., 5.5 A SuperMESH3(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
116 |
STB6N65M2 |
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in D2PAK package |
ST Microelectronics |
117 |
STD16N65M2 |
N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package |
ST Microelectronics |
118 |
STD16N65M5 |
N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in DPAK |
ST Microelectronics |
119 |
STD6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
120 |
STD6N62K3 |
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in DPAK |
ST Microelectronics |
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