| No. |
Part Name |
Description |
Manufacturer |
| 91 |
SGD06N60 |
IGBTs & DuoPacks - 6A 600V TO252AA SMD IGBT |
Infineon |
| 92 |
SGP06N60 |
IGBTs & DuoPacks - 6A 600V TO220AB IGBT |
Infineon |
| 93 |
SGP6N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 94 |
SGP6N60UFD |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 95 |
SGP6N60UFDTU |
Discrete, High Performance IGBT with Diode |
Fairchild Semiconductor |
| 96 |
SGR6N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 97 |
SGR6N60UFTF |
Discrete, High Performance IGBT |
Fairchild Semiconductor |
| 98 |
SGR6N60UFTM |
Discrete, High Performance IGBT |
Fairchild Semiconductor |
| 99 |
SGS6N60 |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 100 |
SGS6N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 101 |
SGS6N60UFD |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 102 |
SGS6N60UFDTU |
Discrete, High Performance IGBT with Diode |
Fairchild Semiconductor |
| 103 |
SGS6N60UFTU |
Discrete, High Performance IGBT |
Fairchild Semiconductor |
| 104 |
SGU6N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 105 |
SGW6N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 106 |
SGW6N60UFD |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 107 |
SGW6N60UFDTM |
Discrete, High Performance IGBT with Diode |
Fairchild Semiconductor |
| 108 |
SKA06N60 |
IGBTs & DuoPacks - 6A 600V TO220-3-31 (Fullpack) IGBT+Diode |
Infineon |
| 109 |
SKB06N60 |
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT+Diode |
Infineon |
| 110 |
SKB06N60HS |
IGBTs & DuoPacks - 6A 600V TO263 IGBT+Diode |
Infineon |
| 111 |
SKP06N60 |
IGBTs & DuoPacks - 6A 600V TO220AB IGBT+Diode |
Infineon |
| 112 |
SKP06N60 |
Fast S-IGBT in NPT-Technology with An... |
Infineon |
| 113 |
SPA06N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 114 |
SPD06N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 115 |
SPP06N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 116 |
SSH6N60 |
N-Channel Power MOSFET |
Samsung Electronic |
| 117 |
SSM6N60 |
N-Channel Power MOSFET |
Samsung Electronic |
| 118 |
SSP6N60 |
N-Channel Power MOSFET |
Samsung Electronic |
| 119 |
STB16N65M5 |
N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in D2PAK |
ST Microelectronics |
| 120 |
STB6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
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