| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N3227 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 152 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
| 153 |
2N3375 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 154 |
2N3418 |
Planar transistor for switching applications |
SGS-ATES |
| 155 |
2N3419 |
Planar transistor for switching applications |
SGS-ATES |
| 156 |
2N3420 |
Planar transistor for switching applications |
SGS-ATES |
| 157 |
2N3421 |
Planar transistor for switching applications |
SGS-ATES |
| 158 |
2N3440S |
Planar transistor for switching applications |
SGS-ATES |
| 159 |
2N350A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 160 |
2N3510 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 161 |
2N3511 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 162 |
2N351A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 163 |
2N3553 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 164 |
2N3632 |
Silicon NPN overlay epitaxial planar transistor for VHF transmitting applications |
ICCE |
| 165 |
2N3647 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 166 |
2N3648 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 167 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 168 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 169 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 170 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 171 |
2N376A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 172 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 173 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 174 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 175 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 176 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 177 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 178 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 179 |
2N3867 |
Planar transistor for switching applications |
SGS-ATES |
| 180 |
2N3868 |
Planar transistor for switching applications |
SGS-ATES |
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