No. |
Part Name |
Description |
Manufacturer |
241 |
2N706 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
242 |
2N706 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
243 |
2N706A |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
244 |
2N706B |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
245 |
2N708 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
246 |
2N708 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
247 |
2N711 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
248 |
2N711A |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
249 |
2N711B |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
250 |
2N744 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
251 |
2N753 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
252 |
2N827 |
PNP germanium mesa transistor for high-speed switching applications, TO-18 case |
Motorola |
253 |
2N828 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
254 |
2N828A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
255 |
2N829 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
256 |
2N834 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
257 |
2N835 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
258 |
2N838 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
259 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
260 |
2N914 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
261 |
2N915 |
NPN silicon annular transistor for high-frequency amplifier, oscillator and switching applications |
Motorola |
262 |
2N960 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
263 |
2N961 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
264 |
2N962 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
265 |
2N963 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
266 |
2N964 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
267 |
2N964A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
268 |
2N965 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
269 |
2N966 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
270 |
2N967 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
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