No. |
Part Name |
Description |
Manufacturer |
211 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
212 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
213 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
214 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
215 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
216 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
217 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
218 |
2N6098 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
219 |
2N6099 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
220 |
2N6100 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
221 |
2N6101 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
222 |
2N6102 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
223 |
2N6103 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
224 |
2N6121 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
225 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
226 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
227 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
228 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
229 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
230 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
231 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
232 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
233 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
234 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
235 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
236 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
237 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
238 |
2N7000A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
239 |
2N7002A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
240 |
2N705 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
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