| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2SD2052 |
Silicon NPN triple diffusion planar type(For high power amplification) |
Panasonic |
| 152 |
2SD2057 |
Silicon NPN triple diffusion planar type For horizontal deflection output |
Panasonic |
| 153 |
2SD2137 |
Silicon NPN triple diffusion planar type(For power amplification) |
Panasonic |
| 154 |
2SD2215 |
Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type) |
Panasonic |
| 155 |
2SD2215 |
Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type) |
Panasonic |
| 156 |
2SD2215A |
Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type) |
Panasonic |
| 157 |
2SD2215A |
Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type) |
Panasonic |
| 158 |
2SD2242A |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 159 |
2SD2254 |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 160 |
2SD2255 |
Silicon NPN triple diffusion planar type Darlington For power amplification |
Panasonic |
| 161 |
2SD2266 |
Silicon NPN triple diffusion planar type(For power switching) |
Panasonic |
| 162 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
| 163 |
2SD2273 |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 164 |
2SD234G |
Silicon NPN diffused junction power transistor, complementary to 2SB434G |
TOSHIBA |
| 165 |
2SD235G |
Silicon NPN diffused junction power transistor, complementary to 2SB435G |
TOSHIBA |
| 166 |
2SD2374 |
Silicon NPN triple diffusion planar type(For power amplification) |
Panasonic |
| 167 |
2SD2413G |
Silicon NPN triple diffusion planar type |
Panasonic |
| 168 |
2SD2486 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 169 |
2SD2527 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 170 |
2SD2538 |
Silicon NPN triple diffusion planer type Darlington(For power amplification) |
Panasonic |
| 171 |
2SD2691A |
Silicon NPN triple diffusion planar type |
Panasonic |
| 172 |
2SD2693 |
Silicon NPN triple diffusion planar type |
Panasonic |
| 173 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 174 |
2SD869 |
HORIZONTAL DEFLECTION POWER TRANSISTOR(NPN) |
MOSPEC Semiconductor |
| 175 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 176 |
5962-9452101M2A |
Precision Picoampere Input Current Quad Operational Amplifier |
Analog Devices |
| 177 |
5962-9452101MCA |
Precision Picoampere Input Current Quad Operational Amplifier |
Analog Devices |
| 178 |
5962-9471701MPA |
QPRO Family of XC1700D QML Configuration PROMs |
Xilinx |
| 179 |
5962-9561701MPA |
QPRO Family of XC1700D QML Configuration PROMs |
Xilinx |
| 180 |
5Z27 |
ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. |
TOSHIBA |
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