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Datasheets for ION P

Datasheets found :: 2407
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No. Part Name Description Manufacturer
31 1N4585GP 800 V, 1 A, miniature glass passivated junction plastic rectifier General Instruments
32 1N4586GP 1000 V, 1 A, miniature glass passivated junction plastic rectifier General Instruments
33 1N5400G GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Rectron Semiconductor
34 1N5401G GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Rectron Semiconductor
35 1N5402G GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Rectron Semiconductor
36 1N5404G GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Rectron Semiconductor
37 1N5406G GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Rectron Semiconductor
38 1N5407G GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Rectron Semiconductor
39 1N5408G GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Rectron Semiconductor
40 1N5624GP 200 V, 3 A, glass passivated junction plastic rectifier General Instruments
41 1N5625GP 400 V, 3 A, glass passivated junction plastic rectifier General Instruments
42 1N5626GP 600 V, 3 A, glass passivated junction plastic rectifier General Instruments
43 1N5627GP 800 V, 3 A, glass passivated junction plastic rectifier General Instruments
44 2-OC1016 Germanium junction PNP transistor TUNGSRAM
45 2-OC1072 Germanium junction PNP transistor TUNGSRAM
46 2-OC1074 Germanium junction PNP transistor TUNGSRAM
47 22SC5405 Silicon NPN triple diffusion planar type Panasonic
48 2FWJ42M SCHOTTKY BARRIER RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATION PORTABLE EQUIPMENT BATTERY APPLICATION TOSHIBA
49 2SB1116A Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. USHA India LTD
50 2SB1645 Silicon PNP triple diffusion planar type Darlington(For power amplification) Panasonic
51 2SB1653 Silicon PNP triple diffusion planar type(For power switching) Panasonic
52 2SB468 Germanium Transistor PNP Diffused Base Alloyed Emitter, intended for use in TV Horizontal Deflection Power Output Hitachi Semiconductor
53 2SB564A Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. USHA India LTD
54 2SC1008 Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. USHA India LTD
55 2SC1009 High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. USHA India LTD
56 2SC1674 TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. USHA India LTD
57 2SC1675 FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. USHA India LTD
58 2SC1845 Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. USHA India LTD
59 2SC2001 Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 USHA India LTD
60 2SC3738 Silicon NPN triple diffusion planar type Panasonic


Datasheets found :: 2407
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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