No. |
Part Name |
Description |
Manufacturer |
31 |
1N4585GP |
800 V, 1 A, miniature glass passivated junction plastic rectifier |
General Instruments |
32 |
1N4586GP |
1000 V, 1 A, miniature glass passivated junction plastic rectifier |
General Instruments |
33 |
1N5400G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER |
Rectron Semiconductor |
34 |
1N5401G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER |
Rectron Semiconductor |
35 |
1N5402G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER |
Rectron Semiconductor |
36 |
1N5404G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER |
Rectron Semiconductor |
37 |
1N5406G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER |
Rectron Semiconductor |
38 |
1N5407G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER |
Rectron Semiconductor |
39 |
1N5408G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER |
Rectron Semiconductor |
40 |
1N5624GP |
200 V, 3 A, glass passivated junction plastic rectifier |
General Instruments |
41 |
1N5625GP |
400 V, 3 A, glass passivated junction plastic rectifier |
General Instruments |
42 |
1N5626GP |
600 V, 3 A, glass passivated junction plastic rectifier |
General Instruments |
43 |
1N5627GP |
800 V, 3 A, glass passivated junction plastic rectifier |
General Instruments |
44 |
2-OC1016 |
Germanium junction PNP transistor |
TUNGSRAM |
45 |
2-OC1072 |
Germanium junction PNP transistor |
TUNGSRAM |
46 |
2-OC1074 |
Germanium junction PNP transistor |
TUNGSRAM |
47 |
22SC5405 |
Silicon NPN triple diffusion planar type |
Panasonic |
48 |
2FWJ42M |
SCHOTTKY BARRIER RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATION PORTABLE EQUIPMENT BATTERY APPLICATION |
TOSHIBA |
49 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
50 |
2SB1645 |
Silicon PNP triple diffusion planar type Darlington(For power amplification) |
Panasonic |
51 |
2SB1653 |
Silicon PNP triple diffusion planar type(For power switching) |
Panasonic |
52 |
2SB468 |
Germanium Transistor PNP Diffused Base Alloyed Emitter, intended for use in TV Horizontal Deflection Power Output |
Hitachi Semiconductor |
53 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
54 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
55 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
56 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
57 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
58 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
59 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
60 |
2SC3738 |
Silicon NPN triple diffusion planar type |
Panasonic |
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