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Datasheets for ION P

Datasheets found :: 2407
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No. Part Name Description Manufacturer
91 2SC4960A Silicon NPN triple diffusion planar type(For power switching) Panasonic
92 2SC5032 Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Panasonic
93 2SC5034 Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Panasonic
94 2SC5035 Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Panasonic
95 2SC5036 Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Panasonic
96 2SC5036A Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Panasonic
97 2SC5037 Silicon NPN triple diffusion planar type Panasonic
98 2SC5037A Silicon NPN triple diffusion planar type Panasonic
99 2SC5063 Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Panasonic
100 2SC5077 Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Panasonic
101 2SC5077A Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Panasonic
102 2SC5127 Silicon NPN triple diffusion planar type Panasonic
103 2SC5127A Silicon NPN triple diffusion planar type Panasonic
104 2SC5145 Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Panasonic
105 2SC5223 Silicon NPN triple diffusion planar type(For high-speed switching) Panasonic
106 2SC5289-T1 Mobile communications transmission power amplifier NEC
107 2SC5393 Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Panasonic
108 2SC5405 Silicon NPN triple diffusion planar type Panasonic
109 2SC5457 Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Panasonic
110 2SC681 Silicon NPN Triple Diffused Transistor, intended for use in 12 Inches TV Horizontal Deflection Power Output Hitachi Semiconductor
111 2SC681A Silicon NPN Triple Diffused Transistor, intended for use in 12 Inches TV Horizontal Deflection Power Output Hitachi Semiconductor
112 2SC838 Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. USHA India LTD
113 2SC9011 Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = USHA India LTD
114 2SC945 Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. USHA India LTD
115 2SD102 Silicon NPN diffused junction power transistor TOSHIBA
116 2SD103 Silicon NPN diffused junction power transistor TOSHIBA
117 2SD110 Silicon NPN diffused junction power transistor TOSHIBA
118 2SD111 Silicon NPN diffused junction power transistor TOSHIBA
119 2SD113 Silicon NPN diffused junction power transistor TOSHIBA
120 2SD114 Silicon NPN diffused junction power transistor TOSHIBA


Datasheets found :: 2407
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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