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Datasheets for ND D

Datasheets found :: 12116
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No. Part Name Description Manufacturer
151 2N3486 PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications Motorola
152 2N3486A PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications Motorola
153 2N3494 PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications Motorola
154 2N3495 PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications Motorola
155 2N3496 PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications Motorola
156 2N3497 PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications Motorola
157 2N3553 Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages AEG-TELEFUNKEN
158 2N3553 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
159 2N3632 Silicon NPN epitaxial planar high frequency power transistor for VHF power stages, oscillators and driver stages AEG-TELEFUNKEN
160 2N3632 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
161 2N3664 NPN silicon transistor for power amplifier and driver applications to 500MHz Motorola
162 2N3722 NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications Motorola
163 2N3723 NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications Motorola
164 2N3866 Silicon NPN epitaxial planar transistor for VHF and UHF power stages, oscillator stages and driver stages AEG-TELEFUNKEN
165 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
166 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
167 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
168 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
169 2N3961 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
170 2N4072 NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications Motorola
171 2N4073 NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications Motorola
172 2N4234 PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices Motorola
173 2N4235 PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices Motorola
174 2N4236 PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices Motorola
175 2N4427 Silicon NPN epitaxial planar transistor for input stages and driver stages in VHF amplifier circuits AEG-TELEFUNKEN
176 2N718A NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications Motorola
177 2N956 NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications Motorola
178 2SA1837 TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
179 2SA1899 TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
180 2SA1930 TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA


Datasheets found :: 12116
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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