| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SK3373 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
TOSHIBA |
| 212 |
2SK3397 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Relay Drive and DC-DC Converter Applications Motor Drive Applications |
TOSHIBA |
| 213 |
2SK3398 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
TOSHIBA |
| 214 |
2SK3471 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications |
TOSHIBA |
| 215 |
2SK3499 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
TOSHIBA |
| 216 |
2SK3506 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Relay Drive and DC-DC Converter Applications Motor Drive Applications |
TOSHIBA |
| 217 |
2SK3543 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
TOSHIBA |
| 218 |
2SK389 |
N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 219 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 220 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 221 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 222 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 223 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 224 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 225 |
380SOE |
PACKAGE SHAPE AND DIMENSIONS |
TRW |
| 226 |
380SOE-F |
PACKAGE SHAPE AND DIMENSIONS |
TRW |
| 227 |
3PM CASE |
CASE SHAPE AND DIMENSIONS |
IPRS Baneasa |
| 228 |
40PT2 CASE |
CASE SHAPE AND DIMENSIONS |
IPRS Baneasa |
| 229 |
45PT2 CASE |
CASE SHAPE AND DIMENSIONS |
IPRS Baneasa |
| 230 |
4N55 |
Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications |
Agilent (Hewlett-Packard) |
| 231 |
4N55-100 |
Hermetically sealed, transistor output optocoupler for analog and digital applications |
Agilent (Hewlett-Packard) |
| 232 |
4N55-200 |
Hermetically sealed, transistor output optocoupler for analog and digital applications |
Agilent (Hewlett-Packard) |
| 233 |
4N55-300 |
Hermetically sealed, transistor output optocoupler for analog and digital applications |
Agilent (Hewlett-Packard) |
| 234 |
4N55/883B |
4N55/883B · Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications |
Agilent (Hewlett-Packard) |
| 235 |
4N55883B |
Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications |
Agilent (Hewlett-Packard) |
| 236 |
4N55_883B-100 |
Hermetically sealed, transistor output optocoupler for analog and digital applications |
Agilent (Hewlett-Packard) |
| 237 |
4N55_883B-200 |
Hermetically sealed, transistor output optocoupler for analog and digital applications |
Agilent (Hewlett-Packard) |
| 238 |
4N55_883B-300 |
Hermetically sealed, transistor output optocoupler for analog and digital applications |
Agilent (Hewlett-Packard) |
| 239 |
4PT2 CASE |
CASE SHAPE AND DIMENSIONS |
IPRS Baneasa |
| 240 |
500SOE |
PACKAGE SHAPE AND DIMENSIONS |
TRW |
| | | |
