No. |
Part Name |
Description |
Manufacturer |
151 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
152 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
153 |
2N2405 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
154 |
2N2453 |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
155 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
156 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
157 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
158 |
2N2641 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
159 |
2N2642 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
160 |
2N2643 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
161 |
2N2644 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
162 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
163 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
164 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
165 |
2N2802 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
166 |
2N2803 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
167 |
2N2804 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
168 |
2N2805 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
169 |
2N2806 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
170 |
2N2807 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
171 |
2N2845 |
NPN silicon annular transistor designed for switching applications |
Motorola |
172 |
2N2846 |
NPN silicon annular transistor designed for switching applications |
Motorola |
173 |
2N2847 |
NPN silicon annular transistor designed for switching applications |
Motorola |
174 |
2N2848 |
NPN silicon annular transistor designed for switching applications |
Motorola |
175 |
2N2857 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
176 |
2N2894 |
PNP silicon annular transistor designed for switching applications |
Motorola |
177 |
2N2903 |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
178 |
2N2903A |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
179 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
180 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
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