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Datasheets for NED

Datasheets found :: 12022
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No. Part Name Description Manufacturer
181 2N2915 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
182 2N2916 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
183 2N2917 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
184 2N2918 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
185 2N2919 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
186 2N2920 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
187 2N2944 PNP silicon annular transistor designed for low-level, high-speed chopper applications Motorola
188 2N2945 PNP silicon annular transistor designed for low-level, high-speed chopper applications Motorola
189 2N2946 PNP silicon annular transistor designed for low-level, high-speed chopper applications Motorola
190 2N2972 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
191 2N2973 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
192 2N2974 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
193 2N2975 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
194 2N2976 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
195 2N2977 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
196 2N2978 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
197 2N2979 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
198 2N3011 NPN silicon low-power transistor designed for switching applications Motorola
199 2N3043 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
200 2N3044 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
201 2N3045 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
202 2N3046 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
203 2N3047 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
204 2N3048 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
205 2N3049 Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
206 2N3050 Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
207 2N3053 NPN silicon annular transistor designed for medium-current applications Motorola
208 2N3055H NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. USHA India LTD
209 2N3114 NPN silicon transistor designed for high-voltage, low power video amplifier applications Motorola
210 2N3137 Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier SGS-ATES


Datasheets found :: 12022
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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