No. |
Part Name |
Description |
Manufacturer |
301 |
2N3816 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
302 |
2N3816A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
303 |
2N3817 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
304 |
2N3817A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
305 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
306 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
307 |
2N3823 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
308 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
309 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
310 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
311 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
312 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
313 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
314 |
2N4012 |
NPN silicon transistor designed for frequency-multiplication applications |
Motorola |
315 |
2N4048 |
PNP germanium power transistor designed for high-current applications |
Motorola |
316 |
2N4049 |
PNP germanium power transistor designed for high-current applications |
Motorola |
317 |
2N4050 |
PNP germanium power transistor designed for high-current applications |
Motorola |
318 |
2N4051 |
PNP germanium power transistor designed for high-current applications |
Motorola |
319 |
2N4052 |
PNP germanium power transistor designed for high-current applications |
Motorola |
320 |
2N4053 |
PNP germanium power transistor designed for high-current applications |
Motorola |
321 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
322 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
323 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
324 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
325 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
326 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
327 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
328 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
329 |
2N4212 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
330 |
2N4213 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
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