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Datasheets for NED

Datasheets found :: 12272
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No. Part Name Description Manufacturer
301 2N3816 Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case Motorola
302 2N3816A Dual PNP silicon transistor designed for differential amplifier applications Motorola
303 2N3817 Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case Motorola
304 2N3817A Dual PNP silicon transistor designed for differential amplifier applications Motorola
305 2N3821 N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications Motorola
306 2N3822 N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications Motorola
307 2N3823 Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications Motorola
308 2N3824 N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications Motorola
309 2N3839 NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers Motorola
310 2N3866 NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment Motorola
311 2N3866 Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications SGS-ATES
312 2N3950 NPN silicon RF power transistor designed for high-power RF amplifier applications Motorola
313 2N3980 Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits Motorola
314 2N4012 NPN silicon transistor designed for frequency-multiplication applications Motorola
315 2N4048 PNP germanium power transistor designed for high-current applications Motorola
316 2N4049 PNP germanium power transistor designed for high-current applications Motorola
317 2N4050 PNP germanium power transistor designed for high-current applications Motorola
318 2N4051 PNP germanium power transistor designed for high-current applications Motorola
319 2N4052 PNP germanium power transistor designed for high-current applications Motorola
320 2N4053 PNP germanium power transistor designed for high-current applications Motorola
321 2N4072 NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications Motorola
322 2N4073 NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications Motorola
323 2N4199 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
324 2N4200 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
325 2N4201 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
326 2N4202 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
327 2N4203 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
328 2N4204 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
329 2N4212 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
330 2N4213 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola


Datasheets found :: 12272
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |



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