| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N3816A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 242 |
2N3817 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 243 |
2N3817A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 244 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 245 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 246 |
2N3823 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
| 247 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 248 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 249 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 250 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 251 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
| 252 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
| 253 |
2N4012 |
NPN silicon transistor designed for frequency-multiplication applications |
Motorola |
| 254 |
2N4048 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 255 |
2N4049 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 256 |
2N4050 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 257 |
2N4051 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 258 |
2N4052 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 259 |
2N4053 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 260 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 261 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 262 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 263 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 264 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 265 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 266 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 267 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 268 |
2N4212 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 269 |
2N4213 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 270 |
2N4214 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
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