No. |
Part Name |
Description |
Manufacturer |
151 |
2N2360 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
152 |
2N2361 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
153 |
2N2362 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
154 |
2N2398 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
155 |
2N2399 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
156 |
2N2646 |
Silicon Planar UNIJUNCTION Transistor |
IPRS Baneasa |
157 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
158 |
2N2647 |
Leaded Thyristor UJT |
Central Semiconductor |
159 |
2N2647 |
Silicon Planar UNIJUNCTION Transistor |
IPRS Baneasa |
160 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
161 |
2N2652 |
Dual NPN silicon transistors for use as a differential amplifier |
Motorola |
162 |
2N2652A |
Dual NPN silicon transistors for use as a differential amplifier |
Motorola |
163 |
2N3058 |
SEPT® silicon PNP transistor ultra low level amplifiers |
Sprague |
164 |
2N3059 |
SEPT® silicon PNP transistor ultra low level amplifiers |
Sprague |
165 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
166 |
2N3423 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
167 |
2N3424 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
168 |
2N3425 |
Dual NPN silicon transistor designed for use as a high-frequency sense amplifier |
Motorola |
169 |
2N3515 |
Dual NPN silicon transistor for use as a differential amplifier |
Motorola |
170 |
2N3518 |
Dual NPN silicon transistor for use as a differential amplifier |
Motorola |
171 |
2N4234 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
172 |
2N4235 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
173 |
2N4236 |
PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices |
Motorola |
174 |
2N4851 |
Silicon annular unijunction transistor |
Motorola |
175 |
2N4852 |
Silicon annular unijunction transistor |
Motorola |
176 |
2N4853 |
Silicon annular unijunction transistor |
Motorola |
177 |
2N4870 |
Leaded Thyristor UJT |
Central Semiconductor |
178 |
2N4871 |
Leaded Thyristor UJT |
Central Semiconductor |
179 |
2N4948 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
180 |
2N4949 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
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