| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N4957 |
RF PNP transistor for UHF low noise amplifier |
IPRS Baneasa |
| 182 |
2N4958 |
RF PNP transistor for UHF low noise amplifier |
IPRS Baneasa |
| 183 |
2N4959 |
RF PNP transistor for UHF low noise amplifier |
IPRS Baneasa |
| 184 |
2N5109 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 185 |
2N5109A |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 186 |
2N5109B |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 187 |
2N5161 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| 188 |
2N5162 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| 189 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| 190 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
| 191 |
2N5646 |
NPN silicon RF power UHF transistor 12W, specified 12.5V 470MHz characteristics |
Motorola |
| 192 |
2N5829 |
RF PNP transistor for UHF low noise amplifier |
IPRS Baneasa |
| 193 |
2N5835 |
RF NPN transistor for UHF amplifier |
IPRS Baneasa |
| 194 |
2N5836 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 195 |
2N5837 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 196 |
2N5945 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 197 |
2N5946 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 198 |
2N6028 |
Leaded Thyristor UJT |
Central Semiconductor |
| 199 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 200 |
2N6136 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 201 |
2N918 |
Silicon NPN epitaxial planar transistor for UHF amplifiers and oscillators |
AEG-TELEFUNKEN |
| 202 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 203 |
2N918 |
Silicon NPN Epitaxial-Planar UHF Transistor |
TELEFUNKEN |
| 204 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 205 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 206 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 207 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 208 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 209 |
2SA1584 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 210 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
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