| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 62 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 63 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 64 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 65 |
1S80 |
Germanium Point Contact Diode, intended for use as a General Detector |
Hitachi Semiconductor |
| 66 |
1SS242 |
Silicon Epitaxial Schottky Barrier Type Diode for UHF band mixer applications, marking S2 |
TOSHIBA |
| 67 |
1SS92 |
(1SS93/1SS94) Silicon Epitaxial Planar Ultra-High Speed Switching Diodes |
ROHM |
| 68 |
1SS97 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 69 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 70 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 71 |
1SS99 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 72 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 73 |
1SV212 |
Silicon Epitaxial planar type variable capacitance diode for VCO for UHF band radio, marking T8 |
TOSHIBA |
| 74 |
1SV229 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
| 75 |
1SV239 |
Variable Capacitance Diode VCO for UHF Radio |
TOSHIBA |
| 76 |
1SV270 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
| 77 |
1SV276 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
| 78 |
1SV277 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
| 79 |
1SV280 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
| 80 |
1SV285 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
| 81 |
1SV293 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
| 82 |
1SV294 |
Variable Resistance Attenuator Use |
SANYO |
| 83 |
1SV306 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
| 84 |
1SV310 |
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio |
TOSHIBA |
| 85 |
1SV311 |
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio |
TOSHIBA |
| 86 |
1SV313 |
DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO |
TOSHIBA |
| 87 |
1SV314 |
DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO |
TOSHIBA |
| 88 |
1SV315 |
Variabe resistance Attenuator Use |
SANYO |
| 89 |
1SV316 |
Variabe resistance Attenuator Use |
SANYO |
| 90 |
1SV328 |
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio |
TOSHIBA |
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