No. |
Part Name |
Description |
Manufacturer |
151 |
IRF332 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
152 |
IRF332 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
153 |
IRF332 |
4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs |
Intersil |
154 |
IRF332 |
Trans MOSFET N-CH 400V 4.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
155 |
IRF332 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
156 |
IRF332 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A |
Siliconix |
157 |
IRF333 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
158 |
IRF333 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
159 |
IRF333 |
4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs |
Intersil |
160 |
IRF333 |
Trans MOSFET N-CH 350V 4.5A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
161 |
IRF333 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
162 |
IRF333 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A |
Siliconix |
163 |
IRF340 |
N-Channel Power MOSFETs/ 10A/ 350V/400V |
Fairchild Semiconductor |
164 |
IRF340 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
165 |
IRF340 |
10A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs |
Intersil |
166 |
IRF340 |
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
167 |
IRF340 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
168 |
IRF340 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 10A |
Siliconix |
169 |
IRF340-343 |
N-Channel Power MOSFETs/ 10A/ 350V/400V |
Fairchild Semiconductor |
170 |
IRF341 |
N-Channel Power MOSFETs/ 10A/ 350V/400V |
Fairchild Semiconductor |
171 |
IRF341 |
Trans MOSFET N-CH 350V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
172 |
IRF341 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
173 |
IRF341 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A |
Siliconix |
174 |
IRF3415 |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
175 |
IRF3415 |
Trans MOSFET N-CH 150V 43A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
176 |
IRF3415L |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
177 |
IRF3415LPBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
178 |
IRF3415PBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
179 |
IRF3415S |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
180 |
IRF3415SPBF |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
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