| No. |
Part Name |
Description |
Manufacturer |
| 61 |
ELJRF3N3DFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 62 |
ELJRF3N3ZFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 63 |
ELJRF3N6DFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 64 |
ELJRF3N6ZFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 65 |
ELJRF3N9DFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 66 |
ELJRF3N9JFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 67 |
ELJRF3N9ZFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 68 |
HRF302A |
Silicon Schottky Barrier Diode for Rectifying |
Hitachi Semiconductor |
| 69 |
HRF32 |
Silicon Schottky Barrier Diode for Rectifying |
Hitachi Semiconductor |
| 70 |
HRF3205 |
100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs |
Fairchild Semiconductor |
| 71 |
HRF3205 |
100A/ 55V/ 0.008 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 72 |
HRF3205S |
100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs |
Fairchild Semiconductor |
| 73 |
HRF3205S |
100A/ 55V/ 0.008 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 74 |
HRF3205_NL |
100A, 55V, 0.008 Ohm, N-Channel, PowerMOSFETs |
Fairchild Semiconductor |
| 75 |
IHSM5832RF3R9L |
High Current/ Surface Mount Inductor |
Vishay |
| 76 |
IRF300 |
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
etc |
| 77 |
IRF3000 |
300V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 78 |
IRF3000PBF |
300V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 79 |
IRF3000TR |
Leaded 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 80 |
IRF3007 |
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 81 |
IRF3007L |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 82 |
IRF3007LPBF |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 83 |
IRF3007PBF |
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 84 |
IRF3007S |
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 85 |
IRF3007STRLPBF |
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 86 |
IRF320 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 87 |
IRF320 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 88 |
IRF320 |
2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 89 |
IRF320 |
Trans MOSFET N-CH 400V 3.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 90 |
IRF320 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
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