No. |
Part Name |
Description |
Manufacturer |
91 |
IRF320-323 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
92 |
IRF3205 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
93 |
IRF3205L |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
94 |
IRF3205LPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
95 |
IRF3205PBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
96 |
IRF3205S |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
97 |
IRF3205SPBF |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
98 |
IRF3205STRL |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
99 |
IRF3205STRLPBF |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
100 |
IRF3205STRR |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
101 |
IRF3205VPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
102 |
IRF3205Z |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package |
International Rectifier |
103 |
IRF3205ZL |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package |
International Rectifier |
104 |
IRF3205ZLPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package |
International Rectifier |
105 |
IRF3205ZPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package |
International Rectifier |
106 |
IRF3205ZS |
55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package |
International Rectifier |
107 |
IRF3205ZSPBF |
55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package |
International Rectifier |
108 |
IRF3205ZSTRLPBF |
55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package |
International Rectifier |
109 |
IRF321 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
110 |
IRF321 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
111 |
IRF321 |
2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs |
Intersil |
112 |
IRF321 |
Trans MOSFET N-CH 350V 3.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
113 |
IRF321 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
114 |
IRF322 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
115 |
IRF322 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
116 |
IRF322 |
2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs |
Intersil |
117 |
IRF322 |
Trans MOSFET N-CH 400V 2.8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
118 |
IRF322 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
119 |
IRF323 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
120 |
IRF323 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
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