No. |
Part Name |
Description |
Manufacturer |
151 |
IRF7205PBF-1 |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
152 |
IRF7205TR |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
153 |
IRF7205TRPBF |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
154 |
IRF7207 |
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
155 |
IRF7207TR |
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
156 |
IRF7207TRPBF |
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
157 |
IRF720B |
400V N-Channel MOSFET |
Fairchild Semiconductor |
158 |
IRF720CF |
Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC |
New Jersey Semiconductor |
159 |
IRF720F1 |
N-channel MOSFET, 400V, 2.5A |
SGS Thomson Microelectronics |
160 |
IRF720PBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
161 |
IRF720S |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
162 |
IRF720SPBF |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
163 |
IRF720STRL |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
164 |
IRF720STRR |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
165 |
IRF721 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
166 |
IRF721 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
167 |
IRF721 |
TRANSISTORS N-CHANNEL |
International Rectifier |
168 |
IRF721 |
Trans MOSFET N-CH 350V 3.3A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
169 |
IRF721 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
170 |
IRF721 |
N-channel MOSFET, 350V, 3.3A |
SGS Thomson Microelectronics |
171 |
IRF721 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 3A |
Siliconix |
172 |
IRF7210 |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
173 |
IRF7210PBF |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
174 |
IRF7210TR |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
175 |
IRF721F1 |
N-channel MOSFET, 350V, 2.5A |
SGS Thomson Microelectronics |
176 |
IRF722 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
177 |
IRF722 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
178 |
IRF722 |
TRANSISTORS N-CHANNEL |
International Rectifier |
179 |
IRF722 |
Trans MOSFET N-CH 400V 2.8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
180 |
IRF722 |
N-Channel Power MOSFET |
Samsung Electronic |
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