| No. |
Part Name |
Description |
Manufacturer |
| 151 |
IRF7207TR |
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 152 |
IRF7207TRPBF |
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 153 |
IRF720B |
400V N-Channel MOSFET |
Fairchild Semiconductor |
| 154 |
IRF720CF |
Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC |
New Jersey Semiconductor |
| 155 |
IRF720F1 |
N-channel MOSFET, 400V, 2.5A |
SGS Thomson Microelectronics |
| 156 |
IRF720PBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 157 |
IRF720S |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 158 |
IRF720SPBF |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 159 |
IRF720STRL |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 160 |
IRF720STRR |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 161 |
IRF721 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 162 |
IRF721 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 163 |
IRF721 |
TRANSISTORS N-CHANNEL |
International Rectifier |
| 164 |
IRF721 |
Trans MOSFET N-CH 350V 3.3A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 165 |
IRF721 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 166 |
IRF721 |
N-channel MOSFET, 350V, 3.3A |
SGS Thomson Microelectronics |
| 167 |
IRF721 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 3A |
Siliconix |
| 168 |
IRF7210 |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 169 |
IRF7210PBF |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 170 |
IRF7210TR |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 171 |
IRF721F1 |
N-channel MOSFET, 350V, 2.5A |
SGS Thomson Microelectronics |
| 172 |
IRF722 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 173 |
IRF722 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 174 |
IRF722 |
TRANSISTORS N-CHANNEL |
International Rectifier |
| 175 |
IRF722 |
Trans MOSFET N-CH 400V 2.8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 176 |
IRF722 |
N-channel MOSFET, 400V, 2.8A |
SGS Thomson Microelectronics |
| 177 |
IRF722 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 2.5A |
Siliconix |
| 178 |
IRF7220 |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 179 |
IRF7220PBF |
HEXFET Power MOSFET |
International Rectifier |
| 180 |
IRF7220TR |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
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