| No. |
Part Name |
Description |
Manufacturer |
| 241 |
IRF7309PBF-1 |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 242 |
IRF7309Q |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 243 |
IRF7309QTRPBF |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 244 |
IRF7309TR |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 245 |
IRF7309TRPBF |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 246 |
IRF7309TRPBF-1 |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 247 |
IRF730A |
400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 248 |
IRF730A |
Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 249 |
IRF730AL |
400V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 250 |
IRF730AL |
Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-262 |
New Jersey Semiconductor |
| 251 |
IRF730ALPBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 252 |
IRF730APBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 253 |
IRF730AS |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 254 |
IRF730ASPBF |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 255 |
IRF730ASTR |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) D2PAK T/R |
New Jersey Semiconductor |
| 256 |
IRF730ASTRL |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 257 |
IRF730ASTRR |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 258 |
IRF730B |
400V N-Channel MOSFET |
Fairchild Semiconductor |
| 259 |
IRF730CF |
Trans MOSFET N-CH 20V 5.2A 8-Pin SOIC T/R |
New Jersey Semiconductor |
| 260 |
IRF730F1 |
Trans MOSFET N-CH 20V 5.2A 8-Pin SOIC T/R |
New Jersey Semiconductor |
| 261 |
IRF730PBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 262 |
IRF730R |
Trans MOSFET N-CH 20V 5.2A 8-Pin SOIC T/R |
New Jersey Semiconductor |
| 263 |
IRF730S |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 264 |
IRF730S |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-263AB |
New Jersey Semiconductor |
| 265 |
IRF730SPBF |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 266 |
IRF730STRL |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 267 |
IRF730STRR |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 268 |
IRF731 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 269 |
IRF731 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 270 |
IRF731 |
Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC |
New Jersey Semiconductor |
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