| No. |
Part Name |
Description |
Manufacturer |
| 181 |
IRF722 |
N-channel MOSFET, 400V, 2.8A |
SGS Thomson Microelectronics |
| 182 |
IRF722 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 2.5A |
Siliconix |
| 183 |
IRF7220 |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 184 |
IRF7220PBF |
HEXFET Power MOSFET |
International Rectifier |
| 185 |
IRF7220TR |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 186 |
IRF7220TRPBF |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 187 |
IRF722F1 |
N-channel MOSFET, 400V, 2A |
SGS Thomson Microelectronics |
| 188 |
IRF723 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 189 |
IRF723 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 190 |
IRF723 |
TRANSISTORS N-CHANNEL |
International Rectifier |
| 191 |
IRF723 |
Trans MOSFET N-CH 350V 2.8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 192 |
IRF723 |
N-Channel Power MOSFET |
Samsung Electronic |
| 193 |
IRF723 |
N-channel MOSFET, 350V, 2.8A |
SGS Thomson Microelectronics |
| 194 |
IRF723 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 2.5A |
Siliconix |
| 195 |
IRF7233 |
Thermoelectric Cooler Controller |
Analog Devices |
| 196 |
IRF7233 |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 197 |
IRF7233PBF |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 198 |
IRF7233TR |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 199 |
IRF7233TRPBF |
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 200 |
IRF723F1 |
N-channel MOSFET, 350V, 2A |
SGS Thomson Microelectronics |
| 201 |
IRF7240 |
-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 202 |
IRF7240TR |
-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 203 |
IRF7240TRPBF |
-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 204 |
IRF7241 |
-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 205 |
IRF7241TR |
-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 206 |
IRF7241TRPBF |
-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 207 |
IRF730 |
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 208 |
IRF730 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 209 |
IRF730 |
400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 210 |
IRF730 |
5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET |
Intersil |
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