| No. |
Part Name |
Description |
Manufacturer |
| 151 |
251UL20S15 |
250 AMP Fast Recovery Power Silicon Rectifiers |
International Rectifier |
| 152 |
251UL40S10 |
250 AMP Fast Recovery Power Silicon Rectifiers |
International Rectifier |
| 153 |
251UL40S15 |
250 AMP Fast Recovery Power Silicon Rectifiers |
International Rectifier |
| 154 |
251UL60S10 |
250 AMP Fast Recovery Power Silicon Rectifiers |
International Rectifier |
| 155 |
251UL60S15 |
250 AMP Fast Recovery Power Silicon Rectifiers |
International Rectifier |
| 156 |
251UL60S20 |
250 AMP Fast Recovery Power Silicon Rectifiers |
International Rectifier |
| 157 |
251UL80S15 |
250 AMP Fast Recovery Power Silicon Rectifiers |
International Rectifier |
| 158 |
251UL80S20 |
250 AMP Fast Recovery Power Silicon Rectifiers |
International Rectifier |
| 159 |
2C2904A |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 160 |
2C2907A |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 161 |
2C3019 |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
| 162 |
2C4261 |
Chip Type 2C4261 Geometry 0014 Polarity PNP |
Semicoa Semiconductor |
| 163 |
2C4957 |
Chip Type 2C4957 Geometry 0006 Polarity PNP |
Semicoa Semiconductor |
| 164 |
2C6193 |
Chip Type 2C6193 Geometry 9700 Polarity PNP |
Semicoa Semiconductor |
| 165 |
2N1303 |
H.F. ALLOY PNP Transistor |
COSEM |
| 166 |
2N1305 |
H.F. ALLOY PNP Transistor |
COSEM |
| 167 |
2N1307 |
H.F. ALLOY PNP Transistor |
COSEM |
| 168 |
2N1309 |
H.F. ALLOY PNP Transistor |
COSEM |
| 169 |
2N1420 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 170 |
2N1487 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
| 171 |
2N1488 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
| 172 |
2N1489 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
| 173 |
2N1490 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
| 174 |
2N1613 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 175 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 176 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 177 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 178 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 179 |
2N2042 |
PNP germanium transistor suitable for high-voltage and high-reliability projects |
Motorola |
| 180 |
2N2043 |
PNP germanium transistor suitable for high-voltage and high-reliability projects |
Motorola |
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