| No. |
Part Name |
Description |
Manufacturer |
| 181 |
251UL80S20 |
250 AMP Fast Recovery Power Silicon Rectifiers |
International Rectifier |
| 182 |
2C2904A |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 183 |
2C2907A |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 184 |
2C3019 |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
| 185 |
2C4261 |
Chip Type 2C4261 Geometry 0014 Polarity PNP |
Semicoa Semiconductor |
| 186 |
2C4957 |
Chip Type 2C4957 Geometry 0006 Polarity PNP |
Semicoa Semiconductor |
| 187 |
2C6193 |
Chip Type 2C6193 Geometry 9700 Polarity PNP |
Semicoa Semiconductor |
| 188 |
2N1303 |
H.F. ALLOY PNP Transistor |
COSEM |
| 189 |
2N1305 |
H.F. ALLOY PNP Transistor |
COSEM |
| 190 |
2N1307 |
H.F. ALLOY PNP Transistor |
COSEM |
| 191 |
2N1309 |
H.F. ALLOY PNP Transistor |
COSEM |
| 192 |
2N1420 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 193 |
2N1487 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
| 194 |
2N1488 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
| 195 |
2N1489 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
| 196 |
2N1490 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
| 197 |
2N1613 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 198 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 199 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 200 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 201 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 202 |
2N2042 |
PNP germanium transistor suitable for high-voltage and high-reliability projects |
Motorola |
| 203 |
2N2043 |
PNP germanium transistor suitable for high-voltage and high-reliability projects |
Motorola |
| 204 |
2N2193A |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 205 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 206 |
2N2904 |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 207 |
2N2904A |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 208 |
2N2904AUB |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 209 |
2N2905 |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 210 |
2N2905A |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| | | |
