| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N4006 |
Silicon Rectifier (nom. current 1A) in DO7 epoxy packages |
Newmarket Transistors NKT |
| 92 |
1N4007 |
Silicon Rectifier (nom. current 1A) in DO7 epoxy packages |
Newmarket Transistors NKT |
| 93 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 94 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 95 |
1N5150A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 96 |
1N5151 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 97 |
1N5152 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 98 |
1N5152A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 99 |
1N5153 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 100 |
1N5153A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 101 |
1N5154 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
| 102 |
1N5155 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
| 103 |
1N5155A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 104 |
1N5156 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 105 |
1N5157 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 106 |
1N5818 |
30 V, 1 A schottky power rectifier diode |
BKC International Electronics |
| 107 |
1N5819 |
40 V, 1 A schottky power rectifier diode |
BKC International Electronics |
| 108 |
1N5829 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 109 |
1N5830 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 110 |
1N5831 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 111 |
1N5832 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 112 |
1N5833 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 113 |
1N5834 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 114 |
1N6095 |
V(rwm): 30V; 27.5A dual schottky power rectifier |
International Rectifier |
| 115 |
1N6096 |
V(rwm): 40V; 27.5A dual schottky power rectifier |
International Rectifier |
| 116 |
1SS344 |
Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 117 |
1SS349 |
Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 118 |
200 |
100/200 |
Henry Pratt Company |
| 119 |
20FQ020 |
V(rwm): 20V; 30A dual schottky power rectifier |
International Rectifier |
| 120 |
20FQ030 |
V(rwm): 30V; 30A dual schottky power rectifier |
International Rectifier |
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