| No. |
Part Name |
Description |
Manufacturer |
| 1591 |
29C021TC-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 1592 |
29C021TC-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 1593 |
29C021TC-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 1594 |
29C021TC-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 1595 |
29C021TI-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 1596 |
29C021TI-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 1597 |
29C021TI-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 1598 |
29C021TI-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 1599 |
29C021TM-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 1600 |
29C021TM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 1601 |
29C021TM-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 1602 |
29C021TM-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 1603 |
2EZ150 |
150 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1604 |
2EZ150 |
150 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
| 1605 |
2KBP005M |
50 V, 2 A, in-line glass passivated single phase rectifier bridge |
TRANSYS Electronics Limited |
| 1606 |
2N2270 |
1.000W General Purpose NPN Metal Can Transistor. 45V Vceo, 1.000A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 1607 |
2N2484 |
0.360W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.050A Ic, 250 hFE. |
Continental Device India Limited |
| 1608 |
2N2905A |
0.600W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 50 hFE. |
Continental Device India Limited |
| 1609 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
| 1610 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
| 1611 |
2N2907A |
0.400W Switching PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 50 hFE. |
Continental Device India Limited |
| 1612 |
2N3019 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 50 hFE. |
Continental Device India Limited |
| 1613 |
2N3053 |
5.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.700A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 1614 |
2N3053 |
5.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.700A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 1615 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
| 1616 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
| 1617 |
2N3705 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE |
Continental Device India Limited |
| 1618 |
2N3705 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE |
Continental Device India Limited |
| 1619 |
2N3713 |
80 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
| 1620 |
2N3714 |
100 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
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