| No. |
Part Name |
Description |
Manufacturer |
| 1711 |
2PD601BSL |
50 V, 200 mA NPN general-purpose transistors |
NXP Semiconductors |
| 1712 |
2PD602AQL |
50 V, 500 mA NPN general-purpose transistors |
Nexperia |
| 1713 |
2PD602AQL |
50 V, 500 mA NPN general-purpose transistors |
NXP Semiconductors |
| 1714 |
2PD602ARL |
50 V, 500 mA NPN general-purpose transistors |
Nexperia |
| 1715 |
2PD602ARL |
50 V, 500 mA NPN general-purpose transistors |
NXP Semiconductors |
| 1716 |
2PD602ASL |
50 V, 500 mA NPN general-purpose transistors |
Nexperia |
| 1717 |
2PD602ASL |
50 V, 500 mA NPN general-purpose transistors |
NXP Semiconductors |
| 1718 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
| 1719 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
| 1720 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
| 1721 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
| 1722 |
2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
| 1723 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
| 1724 |
2SB1314 |
2W Lead frame PNP transistor, maximum rating: -60V Vceo, -3A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
| 1725 |
2SC2412KQLT1 |
50 V, general purpose transistor |
Leshan Radio Company |
| 1726 |
2SC3242 |
900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282 |
Isahaya Electronics Corporation |
| 1727 |
2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A |
Isahaya Electronics Corporation |
| 1728 |
2SC3245 |
900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 |
Isahaya Electronics Corporation |
| 1729 |
2SC3245A |
900mW Lead frame NPN transistor, maximum rating: 150V Vceo, 100mA Ic, 150 to 500 hFE. Complementary 2SA1285A |
Isahaya Electronics Corporation |
| 1730 |
2SC3580 |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398 |
Isahaya Electronics Corporation |
| 1731 |
2SC4154 |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
| 1732 |
2SC5383 |
125mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
| 1733 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 1734 |
2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
Isahaya Electronics Corporation |
| 1735 |
2SK2158(M) |
50 V, 0.1 A, 1.5 V drive high-speed switching power MOS |
NEC |
| 1736 |
2SK4089LS |
Power MOSFET 650 V, 12 A, 720 mOhm Single N-Channel TO-220FL(LS) |
ON Semiconductor |
| 1737 |
2SK4126 |
Power MOSFET 650 V, 15 A, 720 mOhm Single N-Channel TO-3PB |
ON Semiconductor |
| 1738 |
2V095 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 150 V @ 1mA DC test current. |
NTE Electronics |
| 1739 |
2V480 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 750 V @ 1mA DC test current. |
NTE Electronics |
| 1740 |
2W005 |
SINGLE PHASE GLASS BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:2.0A |
Chenyi Electronics |
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