| No. |
Part Name |
Description |
Manufacturer |
| 1621 |
2N3715 |
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS |
Motorola |
| 1622 |
2N3715 |
80 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
| 1623 |
2N3716 |
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS |
Motorola |
| 1624 |
2N3716 |
100 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
| 1625 |
2N3724 |
1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 1626 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 1627 |
2N3771 |
50 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
| 1628 |
2N3771 |
50 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
| 1629 |
2N3772 |
100 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
| 1630 |
2N3791 |
-60 V, -10 A, 150 W, PNP silicon power transistor |
Texas Instruments |
| 1631 |
2N3818 |
NPN silicon transistor for high-frequency power applications to 150 MHz |
Motorola |
| 1632 |
2N4037 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 1633 |
2N4037 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 1634 |
2N4923 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 1635 |
2N5086 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE |
Continental Device India Limited |
| 1636 |
2N5087 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - hFE |
Continental Device India Limited |
| 1637 |
2N5179 |
0.200W General Purpose NPN Metal Can Transistor. 12V Vceo, 0.050A Ic, 25 - 250 hFE. |
Continental Device India Limited |
| 1638 |
2N5232 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 1639 |
2N5232A |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 1640 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 1641 |
2N5330 |
150 V, 30 A high speed NPN transistor |
Solid State Devices Inc |
| 1642 |
2N5344 |
High voltage power PNP silicon transistor. 1 A, 250 V, 40 W. |
Motorola |
| 1643 |
2N5401 |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
| 1644 |
2N5401AI |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
| 1645 |
2N5401HR |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 1646 |
2N5401HRG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 1647 |
2N5401HRT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 1648 |
2N5401RHRG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 1649 |
2N5401RHRT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 1650 |
2N5401RUBG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| | | |
