| No. |
Part Name |
Description |
Manufacturer |
| 1591 |
P4KE170 |
138.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1592 |
P4KE170A |
145.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1593 |
P4KE170A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1594 |
P4KE170C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 153 V, Vbr(max) = 187 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1595 |
P4KE170CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1596 |
P4KE180 |
146.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1597 |
P4KE180A |
154.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1598 |
P4KE180A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1599 |
P4KE180C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1600 |
P4KE180CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1601 |
P4KE200 |
162.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1602 |
P4KE200A |
171.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1603 |
P4KE200C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 180 V, Vbr(max) = 220 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1604 |
P4KE200CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 190 V, Vbr(max) = 210 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1605 |
P4KE220 |
175.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1606 |
P4KE220A |
185.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1607 |
P4KE220C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 198 V, Vbr(max) = 242 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1608 |
P4KE220CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 209 V, Vbr(max) = 231 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1609 |
P4KE250 |
202.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1610 |
P4KE250A |
214.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1611 |
P4KE250C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 225 V, Vbr(max) = 275 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1612 |
P4KE250CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 237 V, Vbr(max) = 263 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1613 |
P4KE300 |
243.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1614 |
P4KE300A |
256.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1615 |
P4KE300C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 270 V, Vbr(max) = 330 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1616 |
P4KE300CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 285 V, Vbr(max) = 315 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1617 |
P4KE350 |
284.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1618 |
P4KE350A |
300.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1619 |
P4KE350C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 315 V, Vbr(max) = 385 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1620 |
P4KE350CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 332 V, Vbr(max) = 368 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
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