| No. |
Part Name |
Description |
Manufacturer |
| 1651 |
P6KE120 |
97.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1652 |
P6KE120A |
102.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1653 |
P6KE120C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 108.0 V, Vbr(max) = 132 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1654 |
P6KE120CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 114.0 V, Vbr(max) = 126 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1655 |
P6KE12A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1656 |
P6KE13 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1657 |
P6KE130 |
105.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1658 |
P6KE130A |
111.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1659 |
P6KE130C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 117.0 V, Vbr(max) = 143 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1660 |
P6KE130CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 124.0 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1661 |
P6KE13A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1662 |
P6KE15 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1663 |
P6KE150 |
121.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1664 |
P6KE150A |
128.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1665 |
P6KE150C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 135.0 V, Vbr(max) = 165 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1666 |
P6KE150CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 143.0 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1667 |
P6KE15A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1668 |
P6KE16 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1669 |
P6KE160 |
130.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1670 |
P6KE160A |
136.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1671 |
P6KE160C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 144 V, Vbr(max) = 176 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1672 |
P6KE160CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 152 V, Vbr(max) = 168 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1673 |
P6KE16A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1674 |
P6KE170 |
138.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1675 |
P6KE170A |
145.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1676 |
P6KE170C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 153 V, Vbr(max) = 187 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1677 |
P6KE170CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1678 |
P6KE18 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 1679 |
P6KE180 |
146.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1680 |
P6KE180 |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
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